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SSM2210S

Analog Devices

SSM2210S by Analog Devices

Analog Devices' SSM2210S is a NPN BJT with 2 elements, built-in diode, hFE of 300. Ideal for amplifier applications, it operates up to 85°C with VCE max of 40V and IC max of 0.02A. This small outline transistor has fT of 200MHz and comes in a plastic/epoxy package with Gull Wing terminals.

Median Price

$5.000

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Ace Electronics

USA . 23 parts In-Stock

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$5.000

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Vyrian

USA . 4,862 parts In-Stock

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Digiode

USA . 716 parts In-Stock

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Classic Components Corporation

USA . 608 parts In-Stock

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Flex Direct, LLC

USA . 238 parts In-Stock

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Bristol Electronics

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Microfarads

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Distributors (Availability)

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Parana Technologies

USA . 10,953 parts In-Stock

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$0.672

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$0.625

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$0.672

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IDEA Electronic Components Group

UK . 1,171 parts In-Stock

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$0.723

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$0.687

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$0.687

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DigiPath Technology Company

USA . 1,514 parts In-Stock

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$1.128

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$1.083

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AZTECH Wire

Italy . 251 parts In-Stock

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$11.483

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One Stop Electronics

USA . 1,161 parts In-Stock

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$12.050

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Semicontronic

India . 919 parts In-Stock

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$35.050

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$34.174

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$33.998

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919

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Kepictronics

USA . 1,200 parts In-Stock

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Corphita

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Overview

The SSM2210S by Analog Devices is a top-quality Small Signal Bipolar Junction Transistor that offers unparalleled performance and reliability. With a manufacturer like Analog Devices known for their cutting-edge technology, this transistor delivers exceptional results in amplifier applications. Its compact design and built-in diode make it perfect for various electronic projects. Experience the value and benefits of the SSM2210S and take your projects to the next level with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, offering versatility and flexibility.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for efficient circuit design and integration, saving space and cost.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring reliable and high-quality performance.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, enhancing manufacturing efficiency.

Package Shape: RECTANGULAR

Suitable for compact and space-saving designs, ideal for portable electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering and connection, enhancing overall reliability and circuit performance.

Minimum DC Current Gain (hFE): 300

Ensures consistent and stable amplification of signals, contributing to overall circuit efficiency.

Maximum Operating Temperature: 85 °C

Offers a high temperature range for reliable operation in various environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low-power applications while providing a margin of safety for the transistor.

Maximum Collector Current (IC): 0.02 A

Designed for low current applications, helping to minimize power consumption and heat generation.

Terminal Finish: TIN LEAD

Provides a reliable and durable finish for the terminal connection, ensuring long-term performance.

Nominal Transition Frequency (fT): 200 MHz

Offers fast response and high bandwidth for signal processing, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2210S attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2210S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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