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SSM2212RZ-R7

Analog Devices

SSM2212RZ-R7 by Analog Devices

Analog Devices' SSM2212RZ-R7 is a NPN BJT transistor with 2 elements and built-in diode, ideal for amplifier applications. With a VCEsat of 0.2V, hFE of 300, and fT of 200MHz, it operates at up to 150°C with a max VCE of 40V and IC of 0.02A. Suitable for surface mount assembly in small outline packages.

Median Price

$6.100

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7 parts In-Stock

1+ parts

$4.745

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-

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7

$4.745

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Newark

USA . 3,083 parts In-Stock

1+ parts

$10.980

100+ parts

$7.160

1k+ parts

$5.410

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3,083

$10.980

$7.160

$5.410

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Farnell

UK . 3,138 parts In-Stock

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$6.100

1k+ parts

$5.440

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3,138

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$6.100

$5.440

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Element14

Singapore . 3,138 parts In-Stock

1+ parts

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100+ parts

$8.210

1k+ parts

$7.890

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3,138

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$8.210

$7.890

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Chip1Stop

Japan . 2,000 parts In-Stock

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$4.614

10k+ parts

$4.568

2,000

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$4.614

$4.568

Verical

USA . 7 parts In-Stock

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7

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Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$5.550

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700

$5.550

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Component Electronics Inc.

Canada . 1 parts In-Stock

1+ parts

$7.690

100+ parts

$5.770

1k+ parts

$5.000

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-

1

$7.690

$5.770

$5.000

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Digiode

USA . 525 parts In-Stock

1+ parts

$8.256

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525

$8.256

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Maritex

Poland . 81 parts In-Stock

1+ parts

$12.137

100+ parts

$7.425

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81

$12.137

$7.425

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Chip Stock

USA . 2,900 parts In-Stock

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Vyrian

USA . 1,113 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,231 parts In-Stock

1+ parts

$0.310

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2,231

$0.310

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Parana Technologies

USA . 8,763 parts In-Stock

1+ parts

$0.329

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$0.306

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8,763

$0.329

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$0.306

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IDEA Electronic Components Group

UK . 1,186 parts In-Stock

1+ parts

$0.354

100+ parts

$0.336

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$0.336

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1,186

$0.354

$0.336

$0.336

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DigiPath Technology Company

USA . 1,402 parts In-Stock

1+ parts

$0.552

100+ parts

$0.530

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1,402

$0.552

$0.530

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Corohmni

South Africa . 68 parts In-Stock

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$0.935

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68

$0.935

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Semicontronic

India . 1,072 parts In-Stock

1+ parts

$3.920

100+ parts

$3.822

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$3.802

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1,072

$3.920

$3.822

$3.802

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Ampacity Inc.

Singapore . 967 parts In-Stock

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$3.920

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967

$3.920

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Netroflash

USA . 500 parts In-Stock

1+ parts

$5.550

100+ parts

$5.439

1k+ parts

$5.273

10k+ parts

$5.162

500

$5.550

$5.439

$5.273

$5.162

Corphita

USA . 330 parts In-Stock

1+ parts

$7.821

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330

$7.821

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Continental Prestige Electronics

USA . 3,287 parts In-Stock

1+ parts

$7.920

100+ parts

$5.920

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$4.710

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3,287

$7.920

$5.920

$4.710

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QUARKTWIN TECHNOLOGY LTD

USA . 22,165 parts In-Stock

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Lixinc

USA . 9,225 parts In-Stock

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Perfect Parts

USA . 4,934 parts In-Stock

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Argo Parts USA

USA . 3,019 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,500 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Metaverse IC Inc.

Canada . 794 parts In-Stock

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iodParts Technologies Inc.

India . 244 parts In-Stock

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244

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Overview

Enhance your electronic designs with the SSM2212RZ-R7 by Analog Devices, a high-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With a maximum VCEsat of 0.2V and a minimum DC current gain of 300, this NPN transistor offers superior performance and reliability. Its compact rectangular package body and gull wing terminals make it easy to integrate into your projects. Trust in Analog Devices' reputation for excellence in semiconductor manufacturing and unlock the potential of your circuits with the SSM2212RZ-R7.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material makes this transistor suitable for various applications while ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode provides additional functionality, while the separate configuration allows for flexibility in circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation onto circuit boards, saving space and simplifying manufacturing processes.

Maximum VCEsat: 0.2 V

Low VCEsat value indicates minimal power dissipation, leading to higher efficiency and lower heat generation in the circuit.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate into circuit designs without wasting space.

No. of Elements: 2

Having 2 elements allows for increased functionality and versatility in circuit design.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient signal amplification in amplifier circuits.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

Rated for a high collector-emitter voltage, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and performance in transistors.

Maximum Collector Current (IC): 0.02 A

High collector current rating allows for handling of larger currents, making it suitable for various applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency enables fast signal switching, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2212RZ-R7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

SSM2212RZ-R7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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