Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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EMZ1DXV6T5G
Onsemi
The Onsemi EMZ1DXV6T5G is a Small Signal BJT with NPN and PNP configurations. It has 2 elements, 6 terminals, and a max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150°C, with a max collector-emitter voltage of 60V and transition frequency of 180MHz.
.1 A
60 V
SEPARATE, 2 ELEMENTS
120
R-PDSO-F6
e3
1
2
6
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN AND PNP
.5 W
Not Qualified
BIP General Purpose Small Signal
YES
TIN
FLAT
DUAL
30
AMPLIFIER
SILICON
180 MHz
MPS5172G
MPS5172G by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 100, and VCE of 25V. Ideal for low-power applications in electronics due to its small package size and high DC current gain.
25 V
SINGLE
100
TO-92
O-PBCY-T3
e1
3
ROUND
CYLINDRICAL
NPN
.625 W
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
MPS5172RLRMG
MPS5172RLRMG by Onsemi is a NPN BJT with hFE of 100, VCE of 25V, and IC of 0.1A. Ideal for low-power applications in electronics due to its small size and high reliability. Suitable for use in various circuits requiring a single NPN transistor configuration.
MPS8599RLRMG
MPS8599RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. operating temp of 150 °C. Ideal for amplifier applications due to its high transition frequency of 150MHz and max collector-emitter voltage of 80V in a cylindrical package shape.
.5 A
80 V
75
PNP
150 MHz
MSC3930-BT1G
MSC3930-BT1G by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a GULL WING terminal form in a small outline package suitable for surface mount assembly.
.03 A
20 V
70
R-PDSO-G3
NOT SPECIFIED
Tin (Sn)
GULL WING
2STX1360
STMicroelectronics
2STX1360 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, collector current of 3A, and operates up to 150 °C. Ideal for efficient signal processing in compact electronic devices.
3 A
160
1 W
MATTE TIN
SWITCHING
130 MHz
785 ns
120 ns
EMT1DXV6T5G
EMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, hFE of 120, and VCE of 60V. Ideal for amplifier applications, it has a max operating temp of 150 °C and transition frequency of 140MHz. This small outline transistor is surface mountable with matte tin finish.
140 MHz
MPSA12G
MPSA12G by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and Vce of 20V. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its configuration and terminal form.
DARLINGTON
20000
MPS4250ARLRMG
MPS4250ARLRMG by Onsemi is a PNP BJT with hFE of 250, VCEO of 40V, and Ptot of 0.625W. Ideal for low-power applications in electronics due to its small size and high gain characteristics. Suitable for use in various electronic circuits requiring a single configuration transistor.
40 V
250
NSBA114EDXV6T5G
NSBA114EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for small outline applications requiring a transistor with max. power dissipation of 0.5W and min. DC current gain of 35 (hFE). Suitable for surface mount designs needing a compact rectangular package shape.
BUILT IN BIAS RESISTOR RATIO IS 1
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
35
NSBA123JDXV6T1G
NSBA123JDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. power dissipation of 0.5W. It has hFE of 80, VCE of 50V, and IC of 0.1A. Ideal for applications requiring small outline package style in surface mount technology.
BUILT IN BIAS RESISTOR RATIO IS 0.047
80
NSBA123JDXV6T5G
NSBA123JDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It has max voltage of 50V, current of 0.1A, and power dissipation of 0.5W. Ideal for applications requiring small outline package style in temp up to 150 °C like signal amplification circuits.
NSBA124EDXV6T5G
NSBA124EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 60. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.
60
NSBA143TDXV6T5G
NSBA143TDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 160. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.
BUILT IN BIAS RESISTOR
NSBA143ZDXV6T5G
NSBA143ZDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V and IC of 0.1A, suitable for small outline applications requiring low collector current in electronic circuits. The transistor's flat terminals and plastic/epoxy package make it ideal for surface mount designs in various electronic devices.
BUILT IN BIAS RESISTOR RATIO IS 0.1
DZT955-13
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;
COLLECTOR
4 A
140 V
R-PDSO-G4
4
2DA1213O-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
2 A
20
R-PSSO-F3
160 MHz
2SA1020G
2SA1020G by Onsemi is a PNP BJT with max power dissipation of 1.5W, hFE of 40, and max operating temp of 150 °C. Ideal for applications requiring a single configuration transistor with max collector-emitter voltage of 50V, such as amplifiers or signal processing circuits.
40
1.5 W
100 MHz
2SA1020RLRAG
2SA1020RLRAG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector current of 2A. It operates up to 150°C, has hFE of at least 40, and fT of 100MHz. Ideal for small signal applications in electronics due to its high performance and reliability.
STX790A-AP
STX790A-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.
30 V
90
.9 W
400 ns
430 ns
NST489AMT1
The Onsemi NST489AMT1 is a NPN BJT transistor with 30V VCEO and 2A IC, ideal for switching applications. It has a hFE of 200, fT of 300MHz, and can handle up to 1.75W power dissipation. With GULL WING terminals in a SMALL OUTLINE package, it operates at temperatures up to 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS
200
R-PDSO-G6
e0
235
1.75 W
TIN LEAD
300 MHz
BCR189L3E6327
Infineon Technologies
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;
.25 W
BCR151L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;
.05 A
BCR146L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;
.07 A
50
BCR192L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;
BCR199L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;
BCR164L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 30;
BCR196L3E6327
BCR112L3E6327
Infineon's BCR112L3E6327 is a NPN BJT with 0.1A IC, 0.25W power dissipation, and hFE of 20. Ideal for surface mount applications in electronics requiring small signal amplification.
BCR149L3E6327
BCR114L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Peak Reflow Temperature (C): 260;
BCR153L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1;
BCR139L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;
BCR162L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
BCR183L3E6327
Infineon's BCR183L3E6327 is a PNP BJT with max. power dissipation of 0.25W, min. DC current gain of 30, and max. collector current of 0.1A. Ideal for surface mount applications in electronics due to its silicon element material and peak reflow temp of 260°C.
BCR101L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;
NSBC124XPDXV6T5G
NSBC124XPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors, a max collector-emitter voltage of 50V, and a min DC current gain of 80 (hFE). With a package style of small outline and surface mount capability, it offers versatility in various electronic designs.
BUILT IN BIAS RESISTOR RATIO IS 2.14
2SCR514PT100
ROHM
ROHM 2SCR514PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.7A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.
.7 A
e2
2 W
TIN COPPER
10
320 MHz
2SCR554PT100
ROHM's 2SCR554PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 120 and nominal transition frequency of 300MHz, it offers high performance in a small outline package suitable for surface mount technology.
1.5 A
STBV42D
STBV42D by STMicroelectronics is an NPN small signal BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 5, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.
1 A
400 V
SINGLE WITH BUILT-IN DIODE
5
O-PBCY-W3
WIRE
STX13004
STX13004 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact designs.
2.5 W
STX826
STX826 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.
ZXTD2090E6TA
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 215 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 1 A;
1.7 W
215 MHz
425 ns
150 ns
ZXTN26070CV-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
70 V
200 MHz
2DA2018-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;
12 V
270
.15 W
260 MHz
DSS5240Y-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 2 A;
220 MHz
DSS9110Y-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;
100 V
125
DTA114TXV3T1G
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
.3 W
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