Loading...

NSBC124XPDXV6T5G

Onsemi

NSBC124XPDXV6T5G by Onsemi

NSBC124XPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors, a max collector-emitter voltage of 50V, and a min DC current gain of 80 (hFE). With a package style of small outline and surface mount capability, it offers versatility in various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,660 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,660

-

-

-

-

Digiode

USA . 308 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

308

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 991 parts In-Stock

1+ parts

$17.160

100+ parts

-

1k+ parts

-

10k+ parts

-

991

$17.160

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 19,667 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,667

-

-

-

-

TANS Electronics

Latvia . 7,073 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,073

-

-

-

-

Kulean Microsystems

USA . 6,465 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,465

-

-

-

-

Problanco Electronics

Mexico . 5,031 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,031

-

-

-

-

SupplyDigital Components

Austria . 3,396 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,396

-

-

-

-

Corphita

USA . 1,858 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,858

-

-

-

-

Corohmni

South Africa . 326 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

326

-

-

-

-

UHIMA Technologies

Türkiye . 294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

294

-

-

-

-

Overview

Enhance your electronic projects with the NSBC124XPDXV6T5G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this transistor offers exceptional performance and reliability for a variety of switching applications. With separate NPN and PNP elements and built-in resistors, this transistor provides convenience and efficiency in a small outline package. Experience the benefits of seamless surface mount installation and a maximum collector-emitter voltage of 50V. Upgrade your circuits with the NSBC124XPDXV6T5G and unlock new possibilities in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and can withstand harsh environments, making the transistor reliable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatility in circuit design, making this transistor suitable for a wide range of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it easier to integrate into projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in signal flow efficiently.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and making it suitable for mass production.

Package Shape: RECTANGULAR

Rectangular shape enables better placement and soldering on the PCB, improving overall assembly quality.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage allows for handling higher voltage applications, increasing the versatility of this transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1 A, this transistor is suitable for low to medium power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC124XPDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 2.14

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC124XPDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20