Loading...

EMT1DXV6T5G

Onsemi

EMT1DXV6T5G by Onsemi

EMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, hFE of 120, and VCE of 60V. Ideal for amplifier applications, it has a max operating temp of 150 °C and transition frequency of 140MHz. This small outline transistor is surface mountable with matte tin finish.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 83 parts In-Stock

1+ parts

$0.420

100+ parts

-

1k+ parts

-

10k+ parts

-

83

$0.420

-

-

-

Rochester

USA . 63,825 parts In-Stock

1+ parts

-

100+ parts

$0.075

1k+ parts

$0.062

10k+ parts

$0.055

63,825

-

$0.075

$0.062

$0.055

Farnell

UK . 63,825 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.065

63,825

-

-

-

$0.065

Verical

USA . 51,825 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.069

51,825

-

-

-

$0.069

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,680 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

-

10k+ parts

-

1,680

$0.061

-

-

-

Semi Source

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,000

-

-

-

-

Vyrian

USA . 12,287 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,287

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 124 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

124

$0.058

-

-

-

Corohmni

South Africa . 271 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

-

271

$0.064

-

-

-

Kepictronics

USA . 800,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

800,000

-

-

-

-

Perfect Parts

USA . 35,616 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

35,616

-

-

-

-

Continental Prestige Electronics

USA . 19,825 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.065

10k+ parts

-

19,825

-

-

$0.065

-

TANS Electronics

Latvia . 8,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,315

-

-

-

-

GreenTree Electronics

Israel . 7,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,950

-

-

-

-

Problanco Electronics

Mexico . 2,318 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,318

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 2,173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,173

-

-

-

-

SupplyDigital Components

Austria . 2,131 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,131

-

-

-

-

Kulean Microsystems

USA . 1,624 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,624

-

-

-

-

Northwest PG Solutions

USA . 770 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

770

-

-

-

-

UHIMA Technologies

Türkiye . 488 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

488

-

-

-

-

Native Components

USA . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Overview

Enhance your amplifier projects with the EMT1DXV6T5G by Onsemi, a high-quality PNP small signal bipolar junction transistor designed to deliver exceptional performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor offers superior amplification capabilities for a wide range of applications. With its compact package body material and surface mount design, this transistor is easy to integrate into your projects, providing value and efficiency. Trust Onsemi's EMT1DXV6T5G to elevate your amplifier designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into various circuit designs, offering versatility in amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Separate 2 elements configuration provides flexibility in circuit design, enabling use in amplifiers with dual-channel requirements.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and signal amplification.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for a variety of environments.

Nominal Transition Frequency (fT): 140 MHz

High nominal transition frequency allows for fast switching capabilities, ideal for applications requiring quick signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMT1DXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMT1DXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6