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EMT1DXV6T1G

Onsemi

EMT1DXV6T1G by Onsemi

EMT1DXV6T1G by Onsemi is a PNP BJT transistor with 2 elements, hFE of 120, and max. VCE of 60V. Ideal for amplifier applications, it has a transition frequency of 140MHz and operates up to 150°C. This small outline transistor is surface mountable with dual terminals in a rectangular package shape.

Median Price

$0.292

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,601 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

$0.145

10k+ parts

$0.089

6,601

$0.490

-

$0.145

$0.089

DigiKey

USA . 43 parts In-Stock

1+ parts

$0.490

100+ parts

$0.192

1k+ parts

$0.128

10k+ parts

$0.089

43

$0.490

$0.192

$0.128

$0.089

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.093

1k+ parts

$0.077

10k+ parts

$0.069

4,000

-

$0.093

$0.077

$0.069

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.086

4,000

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,486 parts In-Stock

1+ parts

$0.072

100+ parts

-

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1,486

$0.072

-

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Vyrian

USA . 757 parts In-Stock

1+ parts

$0.076

100+ parts

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757

$0.076

-

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Bristol Electronics

USA . 7,500 parts In-Stock

1+ parts

$0.389

100+ parts

$0.195

1k+ parts

$0.078

10k+ parts

$0.049

7,500

$0.389

$0.195

$0.078

$0.049

IBS Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.144

20,000

-

-

-

$0.144

NAC Semi

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.208

16,000

-

-

-

$0.208

Dan-Mar Components

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,500

-

-

-

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ACDS - Activité Composants Distribution Service

France . 4,000 parts In-Stock

1+ parts

-

100+ parts

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4,000

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Flip Electronics

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Ack Elektronik San.Tic.Ltd.Sti

. 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Corphita

USA . 1,552 parts In-Stock

1+ parts

$0.068

100+ parts

-

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1,552

$0.068

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Corohmni

South Africa . 78 parts In-Stock

1+ parts

$0.076

100+ parts

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78

$0.076

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Native Components

USA . 830 parts In-Stock

1+ parts

$52.220

100+ parts

-

1k+ parts

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10k+ parts

$50.131

830

$52.220

-

-

$50.131

Northwest PG Solutions

USA . 1,571 parts In-Stock

1+ parts

$57.442

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1,571

$57.442

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QUARKTWIN TECHNOLOGY LTD

USA . 28,636 parts In-Stock

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28,636

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Perfect Parts

USA . 8,258 parts In-Stock

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8,258

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A-Z Elektronik GmbH

Germany . 7,505 parts In-Stock

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7,505

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Kulean Microsystems

USA . 5,282 parts In-Stock

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5,282

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SupplyDigital Components

Austria . 3,691 parts In-Stock

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3,691

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Kepictronics

USA . 3,469 parts In-Stock

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3,469

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Problanco Electronics

Mexico . 1,953 parts In-Stock

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1,953

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UHIMA Technologies

Türkiye . 422 parts In-Stock

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422

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TANS Electronics

Latvia . 53 parts In-Stock

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53

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Overview

Enhance your electronic projects with the EMT1DXV6T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Crafted with precision and expertise by Onsemi, this PNP transistor boasts a multitude of applications, from amplifiers to various circuit designs. With a high DC current gain and maximum collector-emitter voltage, this transistor delivers exceptional performance and reliability. Say goodbye to limitations and explore endless possibilities with the EMT1DXV6T1G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits, making it versatile for different applications.

Configuration: SEPARATE, 2 ELEMENTS

Enables the transistor to be used for separate functions in a circuit, offering flexibility in design.

Transistor Application: AMPLIFIER

Specifically designed for use in amplifier circuits, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving time and effort in assembly.

Package Shape: RECTANGULAR

Allows for space-efficient placement on the circuit board, maximizing use of available space.

Minimum DC Current Gain (hFE): 120

Provides high current gain, ensuring efficient amplification of signals.

Maximum Operating Temperature: 150 °C

Allows for reliable operation at high temperatures, suitable for various industrial environments.

Maximum Collector-Emitter Voltage: 60 V

Can handle high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Offers superior performance and reliability compared to other materials, ensuring consistent operation over time.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for many small signal applications.

Terminal Finish: MATTE TIN

Provides a reliable and low-resistance connection, ensuring good electrical conductivity.

Nominal Transition Frequency (fT): 140 MHz

Allows for high-frequency operation, making it suitable for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMT1DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMT1DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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