Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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UMC2NT1G
Onsemi
UMC2NT1G by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features a max VCEsat of 0.25V, common base configuration, and built-in resistor elements. Ideal for switching applications, this transistor has a max collector-emitter voltage of 50V and operates b/w -65 to 150 °C temperatures.
BUILT-IN BIAS RESISTOR RATIO IS 1
.1 A
50 V
COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR
60
R-PDSO-G5
e3
1
2
5
150 Cel
-65 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN AND PNP
.15 W
Not Qualified
BIP General Purpose Small Signal
YES
Tin (Sn)
GULL WING
DUAL
40
SWITCHING
SILICON
.25 V
MAT14ARZ-RL
Analog Devices
MAT14ARZ-RL by Analog Devices is a NPN BJT transistor with 200 min hFE, 40V VCEO, and 300MHz fT. Ideal for amplifier applications, it features a small outline package with Gull Wing terminals and operates up to 150°C.
LOW NOISE
.03 A
40 V
COMPLEX
200
MS-012AB
R-PDSO-G14
4
14
NPN
Other Transistors
Matte Tin (Sn) - annealed
30
AMPLIFIER
300 MHz
MAT14ARZ
MAT14ARZ by Analog Devices is a NPN BJT transistor with 4 elements and 14 terminals. It has a hFE of 200, operates up to 150°C, and handles a max voltage of 40V. Ideal for amplifier applications due to its high transition frequency of 300MHz and small outline package style.
2N5401G
The Onsemi 2N5401G is a PNP BJT transistor with max. collector-emitter voltage of 150V, max. collector current of 0.6A, and min. DC current gain of 50. It is commonly used in amplifier applications due to its high transition frequency of 100MHz and max. power dissipation of 0.63W for efficient signal amplification.
.6 A
150 V
SINGLE
50
TO-92
O-PBCY-T3
e1
3
ROUND
CYLINDRICAL
PNP
.63 W
NO
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
100 MHz
2N4401G
2N4401G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
.35 W
TIN SILVER COPPER
250 MHz
255 ns
35 ns
2N4403RLRMG
2N4403RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
100
1.5 W
200 MHz
BC237BRL1G
BC237BRL1G by Onsemi is a NPN BJT transistor with a max power dissipation of 0.35W and min DC current gain of 200, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, operating temperature up to 150°C, and nominal transition frequency of 200MHz in a cylindrical package.
EUROPEAN PART NUMBER
45 V
BC237BZL1G
BC237BZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, ideal for amplifier applications. It has a min. DC current gain of 200 and max. operating temp of 150 °C, making it suitable for low-power circuits requiring high frequency response up to 200MHz. The package style is cylindrical with through-hole terminals, offering easy installation in various electronic devices.
BC327-40ZL1G
BC327-40ZL1G by Onsemi is a PNP BJT transistor with hFE of 250, VCEO of 45V, and IC of 0.8A. Ideal for amplifier applications due to its high transition frequency of 260MHz and max power dissipation of 0.625W in a cylindrical package. Operating temperature ranges from -55 to 150°C making it suitable for various electronic designs.
.8 A
250
-55 Cel
.625 W
260 MHz
BC337-40RL1G
BC337-40RL1G by Onsemi is a NPN BJT transistor with hFE of 250, IC of 0.8A, and VCE of 45V. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates b/w -55 to 150 °C. Package style is cylindrical with through-hole terminals.
210 MHz
BC373RL1G
BC373RL1G by Onsemi is a NPN Darlington transistor with max. power dissipation of 0.625W, hFE of 8000, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high gain and can operate up to 150 °C, making it suitable for various electronic designs requiring high performance in a small package.
1 A
80 V
DARLINGTON
8000
TO-226AA
BC546BRL1G
BC546BRL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W and min. DC current gain of 200. It is used in amplifier applications, has max. collector-emitter voltage of 65V, and operates at up to 150°C.
65 V
BC546BZL1G
BC546BZL1G by Onsemi is a NPN BJT transistor with hFE of 200. It has a max power dissipation of 0.625W and fT of 300MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 65V and max collector current of 0.1A.
BC548CZL1G
BC548CZL1G by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 30V, and IC of 0.1A. Ideal for amplifier applications due to its high transition frequency of 300MHz and max power dissipation of 0.625W in a cylindrical package.
30 V
420
BF421ZL1G
BF421ZL1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.83W, hFE of 50, and can handle up to 300V collector-emitter voltage. With a transition frequency of 60MHz and operating temperature up to 150 °C, it's suitable for various electronic circuits requiring high-speed switching capabilities.
.05 A
300 V
.83 W
60 MHz
BF422ZL1G
BF422ZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V, ideal for amplifier applications. It has a min. DC current gain of 50 and max. power dissipation of 0.83W in a cylindrical package style, suitable for through-hole mounting at up to 150 °C operating temperature.
250 V
BF423ZL1G
BF423ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.83W, hFE of 50, and VCE of 250V. Ideal for amplifier applications due to its high transition frequency of 60MHz and max. collector current of 0.05A in a cylindrical package style.
MPSW92G
MPSW92G by Onsemi is a PNP BJT transistor with 1W power dissipation, 300V max collector-emitter voltage, and 50MHz transition frequency. Ideal for switching applications in electronics due to its high current gain and operating temperature up to 150 °C.
.5 A
25
TO-226
1 W
50 MHz
UMA4NT1G
UMA4NT1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.15W, and min DC current gain of 160. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mount assembly.
BUILT IN BIAS RESISTOR
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
160
BC637G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;
60 V
BC638ZL1G
BC638ZL1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 60V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 40 (hFE), such as amplifiers or signal processing circuits.
150 MHz
BC639RL1G
BC639RL1G by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 1A. It has a min DC current gain of 40 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance.
BC640ZL1G
BC640ZL1G by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 40, such as amplifiers or signal processing circuits due to its high transition frequency of 150MHz.
BC859CLT1G
BC859CLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 420, and max operating temp of 150 °C. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency of 100 MHz, and collector-emitter voltage of 30V.
TO-236AB
R-PDSO-G3
.3 W
MMBT6517LT3G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
350 V
15
.225 W
TIN
40 MHz
MPS4250G
MPS4250G by Onsemi is a PNP BJT transistor with hFE of 250, VCE of 40V, and IC of 0.05A. It is used in applications requiring small signal amplification in electronic circuits due to its high gain and low collector current capabilities.
MPS6601G
MPS6601G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and can handle up to 1A collector current. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.
25 V
300 ns
55 ns
MPS6726G
MPS6726G by Onsemi is a PNP BJT transistor with 1W power dissipation, 30V max. collector-emitter voltage, and 50MHz fT. Ideal for amplifier applications due to its single configuration and hFE of 50. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS8599RLRAG
MPS8599RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 75 hFE. It is used in amplifier applications due to its cylindrical package style, through-hole terminals, and silicon element material for high performance amplification at up to 150MHz transition frequency.
75
MPSA06RL1G
MPSA06RL1G by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max power dissipation of 0.625W and a min DC current gain of 100. It is commonly used as an amplifier in various applications.
MPSA06RLRMG
MPSA06RLRMG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 80V and max current of 0.5A. With a min DC current gain of 100, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.
MPSA18RLRPG
MPSA18RLRPG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A, ideal for amplifier applications. It has a min DC current gain of 500 and operates at temperatures up to 150 °C, featuring a cylindrical package style with through-hole terminals.
.2 A
500
160 MHz
MPSA28RLRPG
MPSA28RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 80V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Suitable for use in electronic circuits where precise switching and amplification are needed.
10000
MPSA29RLRPG
MPSA29RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C with a transition frequency of 200MHz in a cylindrical package.
100 V
MPSA42G
MPSA42G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 300V, ideal for amplifier applications. It has a min. DC current gain of 40 and max. power dissipation of 0.625W in a cylindrical package style. With terminal finish of Tin Silver Copper, it operates up to 150°C with nominal transition frequency of 50MHz.
MPSA42RLRMG
MPSA42RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 300V and max. collector current of 0.5A, ideal for amplifier applications. With a min. DC current gain of 40 and max. power dissipation of 1.5W, it operates at up to 150°C making it suitable for various electronic designs requiring high performance in a cylindrical package style.
MPSA44RL1G
MPSA44RL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 40 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its through-hole package style makes it suitable for various electronic circuits.
.3 A
400 V
MPSA56RLRAG
MPSA56RLRAG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 100, and max. collector-emitter voltage of 80V. It is used in amplifier applications due to its cylindrical package style and silicon element material for high performance amplification at up to 50MHz transition frequency.
MPSA63RLRAG
MPSA63RLRAG by Onsemi is a PNP Darlington BJT with 1.5W power dissipation, hFE of 10000, and max temp of 150 °C. Ideal for switching applications due to its 30V VCE, 0.5A IC, and high transition frequency of 125MHz in a cylindrical package.
125 MHz
MPSA92G
MPSA92G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 25, and VCE of 300V. Ideal for amplifier applications due to its single configuration and cylindrical package style.
MPSW01ARLRAG
MPSW01ARLRAG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector current of 1A. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C.
2.5 W
MPSW01ARLRPG
MPSW01ARLRPG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector-emitter voltage of 40V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C, and featuring a nominal transition frequency of 50MHz.
MPSW06G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .5 A;
MPSW06RLRAG
MPSW06RLRAG by Onsemi is a NPN BJT transistor with 80V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in cylindrical form with through-hole terminals for easy integration.
MPSW56RLRAG
MPSW56RLRAG by Onsemi is a PNP BJT with 80V VCEO, 50MHz fT, and 1W power dissipation. Ideal for amplifier applications due to its single configuration and hFE of 50. Its through-hole terminals and cylindrical package make it suitable for various electronic designs.
MPSA63G
MPSA63G by Onsemi is a PNP BJT transistor with a Darlington configuration. It has a max power dissipation of 1.5W, hFE of 10000, and operates up to 150°C. Ideal for switching applications due to its high collector current of 0.5A and max voltage of 30V.
MPSA64G
The Onsemi MPSA64G is a PNP Darlington transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 1.5W and max collector-emitter voltage of 30V, it operates at up to 150 °C. Featuring a min DC current gain of 20k and nominal transition frequency of 125MHz, it is suitable for high-performance electronic circuits.
20000
MPSA64RLRAG
MPSA64RLRAG by Onsemi is a PNP BJT with 30V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for switching applications, it features a high DC current gain of 20k hFE and operates up to 150 °C. Its Darlington configuration makes it suitable for various electronic designs requiring reliable performance in through-hole packages.
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