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BC546BZL1G

Onsemi

BC546BZL1G by Onsemi

BC546BZL1G by Onsemi is a NPN BJT transistor with hFE of 200. It has a max power dissipation of 0.625W and fT of 300MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 65V and max collector current of 0.1A.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Rochester

USA . 81 parts In-Stock

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$0.114

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$0.107

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$0.097

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81

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Nova Conductors

Japan . 100 parts In-Stock

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$0.058

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Digiode

USA . 2,076 parts In-Stock

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$0.103

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Chip Stock

USA . 104,500 parts In-Stock

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Vyrian

USA . 8,421 parts In-Stock

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VNN

France . 5,931 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,623 parts In-Stock

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ComSIT USA

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Distributors (Availability)

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Corohmni

South Africa . 403 parts In-Stock

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$0.056

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403

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Continental Prestige Electronics

USA . 6,748 parts In-Stock

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$0.058

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Argo Parts USA

USA . 2,220 parts In-Stock

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Ampacity Inc.

Singapore . 81 parts In-Stock

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$0.092

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Semicontronic

India . 81 parts In-Stock

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$0.090

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$0.089

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Corphita

USA . 1,139 parts In-Stock

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Component Stockers USA

USA . 102 parts In-Stock

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$0.110

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Aztec Data Supply Inc.

USA . 120 parts In-Stock

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$1.471

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AZTECH Wire

Italy . 891 parts In-Stock

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$14.946

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Perfect Parts

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 8,234 parts In-Stock

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Kulean Microsystems

USA . 7,780 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,208 parts In-Stock

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Problanco Electronics

Mexico . 5,783 parts In-Stock

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Alle Elektronik GmbH

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SupplyDigital Components

Austria . 3,217 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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Overview

Discover the superior performance and reliability of the BC546BZL1G Small Signal Bipolar Junction Transistor by Onsemi. Designed for amplifying applications, this NPN transistor offers a DC current gain of 200 and a maximum power dissipation of 0.625 W, making it ideal for a wide range of electronic projects. With a maximum operating temperature of 150°C and a collector-emitter voltage of 65V, this transistor is built to last. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the BC546BZL1G brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this product lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for ease of integration with other components in a circuit, making this product versatile and widely compatible.

Configuration: SINGLE

The single configuration simplifies the design and enhances the performance of the transistor, making it ideal for use in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures optimum amplification with high efficiency.

Package Shape: ROUND

The round package shape allows for easy installation and secure placement in a circuit, adding convenience to the overall design.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides stability and reliability in connection, ensuring consistent performance in various environments.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit configurations and enables precise control over the flow of current.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation of 0.625 W, this transistor can handle heavy loads and operate efficiently under demanding conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and space-saving benefits, making it an ideal choice for compact designs.

Minimum DC Current Gain (hFE): 200

The minimum DC current gain of 200 ensures reliable and consistent amplification, enabling the transistor to deliver stable performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring long-term durability and reliability.

Maximum Collector-Emitter Voltage: 65 V

The maximum collector-emitter voltage of 65 V allows for safe and efficient operation within specified voltage ranges, enhancing the overall performance of the transistor.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high conductivity, low power consumption, and excellent reliability, making it a top choice for electronic devices.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads with ease, making it suitable for a wide range of applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish of tin/silver/copper provides excellent conductivity, corrosion resistance, and solderability, ensuring strong and durable connections.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and facilitates efficient heat dissipation, enhancing the overall performance and reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 40

With a maximum time at peak reflow temperature of 40 seconds, this transistor can withstand high-temperature soldering processes without compromising its functionality.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures secure soldering connections, making this transistor suitable for high-temperature assembly environments.

Nominal Transition Frequency (fT): 300 MHz

With a high nominal transition frequency of 300 MHz, this transistor can deliver fast response times and high-speed performance, making it ideal for signal amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC546BZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC546BZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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