Loading...

BC237BZL1G

Onsemi

BC237BZL1G by Onsemi

BC237BZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, ideal for amplifier applications. It has a min. DC current gain of 200 and max. operating temp of 150 °C, making it suitable for low-power circuits requiring high frequency response up to 200MHz. The package style is cylindrical with through-hole terminals, offering easy installation in various electronic devices.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

2,000

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 883 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

883

$0.041

-

-

-

Chip Stock

USA . 17,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,000

-

-

-

-

Vyrian

USA . 4,437 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,437

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,102 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

2,102

$0.039

-

-

-

Component Stockers USA

USA . 1,742 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

-

1,742

$0.040

$0.040

$0.040

-

Corohmni

South Africa . 218 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

-

218

$0.043

-

-

-

AZTECH Wire

Italy . 913 parts In-Stock

1+ parts

$16.920

100+ parts

-

1k+ parts

-

10k+ parts

-

913

$16.920

-

-

-

Kulean Microsystems

USA . 7,371 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,371

-

-

-

-

TANS Electronics

Latvia . 4,617 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,617

-

-

-

-

Problanco Electronics

Mexico . 3,086 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,086

-

-

-

-

Northwest PG Solutions

USA . 1,224 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,224

-

-

-

-

SupplyDigital Components

Austria . 884 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

884

-

-

-

-

Native Components

USA . 771 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

771

-

-

-

-

UHIMA Technologies

Türkiye . 293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

293

-

-

-

-

Overview

Enhance your electronic projects with the BC237BZL1G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is perfect for amplifier applications, offering superior performance and efficiency. With a high DC current gain of 200 and a maximum collector-emitter voltage of 45V, this NPN transistor guarantees optimal functionality. Upgrade your designs with the BC237BZL1G and experience the innovation and value that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor configuration for ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection in circuit boards.

Maximum Power Dissipation (Abs): 0.35 W

Can handle up to 0.35W of power dissipation, making it suitable for low-power applications.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 45 V

Can withstand up to 45V between collector and emitter, ensuring reliability in various voltage conditions.

Minimum DC Current Gain (hFE): 200

High DC current gain of 200 ensures effective amplification of input signals.

Transistor Element Material: SILICON

Silicon material provides efficiency and reliability in transistor performance.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1A of collector current, suitable for low-current applications.

Terminal Position: BOTTOM

Bottom terminal position for easy mounting on circuit boards.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency of 200MHz enables high-speed signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC237BZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC237BZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20