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BC237BG

Onsemi

BC237BG by Onsemi

BC237BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for amplifier applications. Featuring a min. DC current gain of 200 and nominal transition frequency of 200MHz, it comes in a cylindrical package with through-hole terminals for easy installation.

Median Price

$0.192

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 59 parts In-Stock

1+ parts

$0.540

100+ parts

$0.275

1k+ parts

$0.275

10k+ parts

$0.275

59

$0.540

$0.275

$0.275

$0.275

Verical

USA . 5,539 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.192

10k+ parts

$0.178

5,539

-

-

$0.192

$0.178

Rochester

USA . 33 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.033

10k+ parts

$0.029

33

-

$0.040

$0.033

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 633 parts In-Stock

1+ parts

$0.031

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-

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633

$0.031

-

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Nova Conductors

Japan . 81 parts In-Stock

1+ parts

$0.167

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81

$0.167

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Chip Stock

USA . 48,000 parts In-Stock

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48,000

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ComSIT Distribution GmbH

Germany . 15,000 parts In-Stock

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15,000

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ComSIT USA

USA . 15,000 parts In-Stock

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15,000

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Bristol Electronics

USA . 13,159 parts In-Stock

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13,159

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Dan-Mar Components

USA . 13,159 parts In-Stock

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13,159

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Vyrian

USA . 8,012 parts In-Stock

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8,012

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LIBRA Elektronik GmbH

Germany . 4,937 parts In-Stock

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4,937

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VNN

France . 3,647 parts In-Stock

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3,647

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ACDS - Activité Composants Distribution Service

France . 3,159 parts In-Stock

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3,159

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,836 parts In-Stock

1+ parts

$0.028

100+ parts

-

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1,836

$0.028

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Semicontronic

India . 1,607 parts In-Stock

1+ parts

$0.028

100+ parts

$0.027

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$0.027

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-

1,607

$0.028

$0.027

$0.027

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Corphita

USA . 1,221 parts In-Stock

1+ parts

$0.030

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1,221

$0.030

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Corohmni

South Africa . 495 parts In-Stock

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$0.033

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495

$0.033

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.164

100+ parts

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1k+ parts

$0.157

10k+ parts

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50

$0.164

-

$0.157

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Continental Prestige Electronics

USA . 4,922 parts In-Stock

1+ parts

$0.167

100+ parts

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$0.164

4,922

$0.167

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$0.164

Argo Parts USA

USA . 2,871 parts In-Stock

1+ parts

$0.167

100+ parts

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$0.162

2,871

$0.167

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$0.162

Modulus Dynamics

Lithuania . 16,175 parts In-Stock

1+ parts

$0.167

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$0.167

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$0.167

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-

16,175

$0.167

$0.167

$0.167

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Component Stockers USA

USA . 11,159 parts In-Stock

1+ parts

$0.530

100+ parts

$0.270

1k+ parts

$0.190

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11,159

$0.530

$0.270

$0.190

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AZTECH Wire

Italy . 494 parts In-Stock

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$15.610

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494

$15.610

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Perfect Parts

USA . 27,480 parts In-Stock

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SupplyDigital Components

Austria . 8,116 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,755 parts In-Stock

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Problanco Electronics

Mexico . 6,531 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 4,992 parts In-Stock

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Glotronic Ltd.

UK . 3,994 parts In-Stock

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Kulean Microsystems

USA . 3,458 parts In-Stock

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TANS Electronics

Latvia . 2,902 parts In-Stock

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UHIMA Technologies

Türkiye . 230 parts In-Stock

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Overview

Enhance your electronic projects with the BC237BG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for amplifier applications. Manufactured by Onsemi, known for their cutting-edge technology and reliable products, this NPN transistor offers a DC current gain of 200 and a maximum power dissipation of 0.35W. With a maximum operating temperature of 150°C and a collector-emitter voltage of 45V, this transistor provides exceptional performance and durability. Upgrade your designs with the BC237BG and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it reliable and durable.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it suitable for various applications.

Configuration: SINGLE

Simplifies circuit design and layout, making it easier to use in projects.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Package Shape: ROUND

Compact design and easy to mount, suitable for space-constrained projects.

Terminal Form: THROUGH-HOLE

Easy to solder onto a circuit board, allowing for secure connections.

Maximum Power Dissipation (Abs): 0.35 W

Can handle moderate power levels without overheating, suitable for medium-duty applications.

Package Style (Meter): CYLINDRICAL

Unique shape that may differentiate it from other components, aiding in identification and installation.

Minimum DC Current Gain (hFE): 200

High gain ensures effective amplification, improving signal strength and quality.

Maximum Operating Temperature: 150 °C

Able to operate at high temperatures without performance degradation, suitable for industrial or high-demand environments.

Maximum Collector-Emitter Voltage: 45 V

Can handle higher voltage levels, providing flexibility in circuit design and operation.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, ensuring stability and consistent performance.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for low to medium-power applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring long-term reliability and performance.

Terminal Position: BOTTOM

Easy to mount and connect, suitable for various circuit layouts.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes, ensuring secure and reliable connections.

Nominal Transition Frequency (fT): 200 MHz

High frequency response, suitable for applications requiring fast switching and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC237BG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC237BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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