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MPS6726G

Onsemi

MPS6726G by Onsemi

MPS6726G by Onsemi is a PNP BJT transistor with 1W power dissipation, 30V max. collector-emitter voltage, and 50MHz fT. Ideal for amplifier applications due to its single configuration and hFE of 50. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

$1.150

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 39 parts In-Stock

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$1.150

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Digiode

USA . 1,205 parts In-Stock

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$1.092

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Chip Stock

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Vyrian

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Corphita

USA . 2,395 parts In-Stock

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$1.035

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Corohmni

South Africa . 128 parts In-Stock

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AZTECH Wire

Italy . 498 parts In-Stock

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$21.040

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QUARKTWIN TECHNOLOGY LTD

USA . 22,993 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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SupplyDigital Components

Austria . 6,180 parts In-Stock

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Problanco Electronics

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A-Z Elektronik GmbH

Germany . 4,583 parts In-Stock

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Kepictronics

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Infinite Electronics LLP (Excess)

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TANS Electronics

Latvia . 789 parts In-Stock

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UHIMA Technologies

Türkiye . 550 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

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Overview

Enhance the performance of your amplifiers with the Onsemi MPS6726G Small Signal Bipolar Junction Transistor. Crafted with precision by Onsemi, this PNP transistor offers unmatched quality and reliability. Ideal for amplifier applications, this single configuration transistor delivers superior power dissipation capabilities and a high DC current gain of 50. With a maximum operating temperature of 150 °C and a collector-emitter voltage of 30V, the MPS6726G guarantees exceptional performance in a compact cylindrical package. Upgrade your electronics with this top-of-the-line transistor from Onsemi and experience enhanced efficiency and reliability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are needed, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design by having only one transistor in the package, making it easier to integrate into the circuit.

Transistor Application: AMPLIFIER

Ideal for amplifier applications where signal amplification is required, ensuring optimal performance in audio or signal processing.

Package Shape: ROUND

Compact and space-saving design, making it suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Easily soldered onto PCBs, providing a secure and reliable connection for the transistor in the circuit.

Maximum Power Dissipation (Abs): 1 W

Can handle power dissipation up to 1 watt, making it suitable for low to medium power applications.

Package Style (Meter): CYLINDRICAL

Aesthetically pleasing design that can be easily mounted in cylindrical enclosures or devices.

Minimum DC Current Gain (hFE): 50

Ensures stable and reliable amplification of input signals, providing consistent performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively at temperatures up to 150 °C, suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 30 V

Can withstand voltages up to 30 volts, making it versatile for various voltage requirements in circuits.

Transistor Element Material: SILICON

Provides high performance and reliability compared to other semiconductor materials, ensuring long-term functionality.

Maximum Collector Current (IC): 1 A

Capable of handling collector currents up to 1 amp, suitable for medium current applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring stable electrical connections for the transistor.

Terminal Position: BOTTOM

Simplifies PCB layout and assembly, allowing for easy integration into the circuit design.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering processes, ensuring reliable solder joints.

Nominal Transition Frequency (fT): 50 MHz

Capable of high-frequency performance up to 50 MHz, suitable for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6726G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6726G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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