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MPS8599RLRAG

Onsemi

MPS8599RLRAG by Onsemi

MPS8599RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 75 hFE. It is used in amplifier applications due to its cylindrical package style, through-hole terminals, and silicon element material for high performance amplification at up to 150MHz transition frequency.

Median Price

$0.976

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 4,006 parts In-Stock

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$0.976

100+ parts

$0.966

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4,006

$0.976

$0.966

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Digiode

USA . 1,423 parts In-Stock

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$0.927

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$0.927

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Chip Stock

USA . 54,000 parts In-Stock

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Vyrian

USA . 6,488 parts In-Stock

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Bristol Electronics

USA . 888 parts In-Stock

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$0.292

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$0.144

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888

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Nova Conductors

Japan . 70 parts In-Stock

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70

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,906 parts In-Stock

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$0.830

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$0.830

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Corphita

USA . 659 parts In-Stock

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$0.878

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659

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Advanced Electronics

New Zealand . 4,006 parts In-Stock

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$0.976

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$0.966

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$0.927

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4,006

$0.976

$0.966

$0.927

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Corohmni

South Africa . 164 parts In-Stock

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$0.976

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Benley Electronics

USA . 1 parts In-Stock

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$1.000

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AZTECH Wire

Italy . 565 parts In-Stock

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$10.300

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Component Stockers USA

USA . 759 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 29,487 parts In-Stock

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Problanco Electronics

Mexico . 5,486 parts In-Stock

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TANS Electronics

Latvia . 5,380 parts In-Stock

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SupplyDigital Components

Austria . 5,199 parts In-Stock

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Aranea Global

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Kulean Microsystems

USA . 1,545 parts In-Stock

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UHIMA Technologies

Türkiye . 22 parts In-Stock

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Overview

Discover the powerful performance of the MPS8599RLRAG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their excellence in electronic components, this PNP transistor is ideal for amplifier applications. With a maximum collector-emitter voltage of 80V and a nominal transition frequency of 150MHz, this transistor offers reliable and efficient operation. Trust Onsemi for superior quality and performance in your electronic projects with the MPS8599RLRAG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to external factors, making the transistor suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, offering versatility in applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces complexity in the overall system.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance in signal amplification.

Package Shape: ROUND

Round package shape allows for easy integration and mounting in different devices or circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, suitable for various PCB mounting methods.

No. of Terminals: 3

Three terminals offer flexibility in circuit connectivity and signal routing, enhancing the transistor's usability.

Maximum Power Dissipation (Abs): 0.625 W

High power dissipation capability ensures reliable performance and thermal management in demanding applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style facilitates heat dissipation and makes the transistor compact for space-constrained designs.

Minimum DC Current Gain (hFE): 75

Minimum DC current gain of 75 ensures stable and consistent amplification of input signals.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for reliable operation in challenging thermal conditions.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating of 80V enhances the transistor's ability to handle large voltage swings.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, ensuring reliable performance and durability.

Maximum Collector Current (IC): 0.5 A

High collector current rating of 0.5A allows the transistor to handle moderate power levels with efficiency.

Terminal Finish: TIN SILVER COPPER

Tin silver copper terminal finish offers excellent conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and ensures easy soldering and connection of the transistor.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for easy and reliable soldering during manufacturing or assembly processes.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency of 150MHz indicates the transistor's high-speed switching capability and wide bandwidth for signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8599RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8599RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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