Loading...

MPSA56RLRAG

Onsemi

MPSA56RLRAG by Onsemi

MPSA56RLRAG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 100, and max. collector-emitter voltage of 80V. It is used in amplifier applications due to its cylindrical package style and silicon element material for high performance amplification at up to 50MHz transition frequency.

Median Price

$0.107

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 30 parts In-Stock

1+ parts

$0.107

100+ parts

-

1k+ parts

-

10k+ parts

-

30

$0.107

-

-

-

Chip Stock

USA . 59,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

59,000

-

-

-

-

Sensible Micro Corp

USA . 15,039 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,039

-

-

-

-

Vyrian

USA . 9,264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,264

-

-

-

-

Digiode

USA . 2,330 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,330

-

-

-

-

Q Components

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 1,493 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

$0.091

1,493

$0.094

-

-

$0.091

Continental Prestige Electronics

USA . 935 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

935

$0.094

-

-

$0.092

Corohmni

South Africa . 107 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

-

10k+ parts

-

107

$0.105

-

-

-

Bastille Electronics

Australia . 15 parts In-Stock

1+ parts

$0.107

100+ parts

$0.102

1k+ parts

$0.097

10k+ parts

$0.095

15

$0.107

$0.102

$0.097

$0.095

Aztec Data Supply Inc.

USA . 1,728 parts In-Stock

1+ parts

$1.576

100+ parts

-

1k+ parts

-

10k+ parts

-

1,728

$1.576

-

-

-

AZTECH Wire

Italy . 243 parts In-Stock

1+ parts

$11.083

100+ parts

-

1k+ parts

-

10k+ parts

-

243

$11.083

-

-

-

Semicontronic

India . 586 parts In-Stock

1+ parts

$45.050

100+ parts

$43.924

1k+ parts

$43.698

10k+ parts

-

586

$45.050

$43.924

$43.698

-

Ampacity Inc.

Singapore . 273 parts In-Stock

1+ parts

$48.050

100+ parts

-

1k+ parts

-

10k+ parts

-

273

$48.050

-

-

-

Kepictronics

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

44,000

-

-

-

-

Perfect Parts

USA . 30,880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30,880

-

-

-

-

Problanco Electronics

Mexico . 6,663 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,663

-

-

-

-

TANS Electronics

Latvia . 4,363 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,363

-

-

-

-

SupplyDigital Components

Austria . 2,576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,576

-

-

-

-

Corphita

USA . 941 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

941

-

-

-

-

Kulean Microsystems

USA . 880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

880

-

-

-

-

Metaverse IC Inc.

Canada . 193 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

193

-

-

-

-

UHIMA Technologies

Türkiye . 129 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

129

-

-

-

-

Overview

Enhance your electronic designs with the MPSA56RLRAG by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for amplifier applications. With a maximum power dissipation of 0.625W and a minimum DC current gain of 100, this transistor provides superior functionality. Upgrade your projects with the MPSA56RLRAG and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for positive current flow from collector to emitter, ideal for certain circuit designs.

Configuration: SINGLE

Simplified design with only one transistor in the package, easy to integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifying signals efficiently and accurately.

Package Shape: ROUND

Compact shape that is easy to handle and install in circuits.

Terminal Form: THROUGH-HOLE

Allows for easy and secure mounting on circuit boards.

Maximum Power Dissipation (Abs): 0.625 W

Can handle power dissipation up to 0.625W, suitable for many amplifier applications.

Package Style (Meter): CYLINDRICAL

Sleek and uniform design that fits well in various electronic devices.

Minimum DC Current Gain (hFE): 100

Provides high gain, ensuring efficient amplification of signals.

Maximum Operating Temperature: 150 °C

Able to operate effectively at high temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 80 V

Can handle high voltages, making it versatile for different circuit requirements.

Transistor Element Material: SILICON

Silicon material ensures reliability and stability in performance over time.

Maximum Collector Current (IC): 0.5 A

Capable of handling currents up to 0.5A, suitable for many amplifier applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Easily accessible terminals for convenient connection in circuits.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during the reflow process for soldering.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for effective amplification of higher frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA56RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA56RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20