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MPSA42RLRMG

Onsemi

MPSA42RLRMG by Onsemi

MPSA42RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 300V and max. collector current of 0.5A, ideal for amplifier applications. With a min. DC current gain of 40 and max. power dissipation of 1.5W, it operates at up to 150°C making it suitable for various electronic designs requiring high performance in a cylindrical package style.

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Lifecycle Status

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7

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1k+

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Chip Stock

USA . 44,000 parts In-Stock

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Vyrian

USA . 4,496 parts In-Stock

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Digiode

USA . 1,120 parts In-Stock

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Florida Circuit

USA . 601 parts In-Stock

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PC Components Company LLC

USA . 50 parts In-Stock

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50

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Bristol Electronics

USA . 50 parts In-Stock

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Nova Conductors

Japan . 43 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,367 parts In-Stock

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$1.310

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AZTECH Wire

Italy . 530 parts In-Stock

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$11.953

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Ampacity Inc.

Singapore . 366 parts In-Stock

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$20.050

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Component Stockers USA

USA . 533 parts In-Stock

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$99.990

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Perfect Parts

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TANS Electronics

Latvia . 8,031 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Argo Parts USA

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Continental Prestige Electronics

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SupplyDigital Components

Austria . 2,232 parts In-Stock

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Corphita

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UHIMA Technologies

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Bastille Electronics

Australia . 300 parts In-Stock

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Corohmni

South Africa . 272 parts In-Stock

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor for your amplifier projects? Look no further than the MPSA42RLRMG by Onsemi. With a maximum collector-emitter voltage of 300V and a DC current gain of 40, this NPN transistor is designed for high-performance applications. Its durable plastic/epoxy package ensures long-term reliability, while its cylindrical shape makes installation a breeze. Trust Onsemi's reputation for quality and innovation, and experience the value and benefits that the MPSA42RLRMG brings to your projects. Upgrade your amplifier designs with this top-of-the-line transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material makes the transistor suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type which makes it compatible with a wide range of circuit designs.

Configuration: SINGLE

Simplified design and easy to use for basic amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in audio or signal processing circuits.

Maximum Power Dissipation (Abs): 1.5 W

Ability to handle high power levels without overheating, suitable for demanding applications.

Package Shape: ROUND

Compact shape that allows for easy mounting in various electronic devices.

Terminal Form: THROUGH-HOLE

Convenient for manual soldering and prototyping purposes.

No. of Terminals: 3

Simplified terminal configuration makes it easy to integrate into circuits.

Maximum Collector-Emitter Voltage: 300 V

Can handle high voltage levels, suitable for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels, suitable for low to medium power applications.

Nominal Transition Frequency (fT): 50 MHz

High-frequency response allows for accurate signal amplification in audio and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA42RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA42RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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