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BC548CZL1G

Onsemi

BC548CZL1G by Onsemi

BC548CZL1G by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 30V, and IC of 0.1A. Ideal for amplifier applications due to its high transition frequency of 300MHz and max power dissipation of 0.625W in a cylindrical package.

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1k+

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Chip Stock

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Sweden . 1,945 parts In-Stock

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AZTECH Wire

Italy . 455 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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UHIMA Technologies

Türkiye . 370 parts In-Stock

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Problanco Electronics

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Overview

Discover the BC548CZL1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With a minimum DC current gain of 420 and a maximum operating temperature of 150 °C, this NPN transistor offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product guarantees top-notch quality and value. Upgrade your electronic projects with the BC548CZL1G and experience the benefits of superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good physical protection and insulation for the transistor, ensuring durability and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are easy to work with in many electronic designs.

Configuration: SINGLE

Simplifies circuit design and integration by having a single transistor in the package.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in such circuits.

No. of Terminals: 3

Standard number of terminals for a bipolar junction transistor, facilitating easy connectivity in circuits.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels, making it suitable for various amplification tasks without overheating.

Maximum Operating Temperature: 150 °C

Can operate under relatively high temperatures, providing flexibility in different operating environments.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to moderate voltage applications, commonly found in amplification circuits.

Minimum DC Current Gain (hFE): 420

High DC current gain ensures efficient amplification and signal strength in the circuit.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes, ensuring a reliable solder connection.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for amplification of high-frequency signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC548CZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC548CZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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