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BF421ZL1G

Onsemi

BF421ZL1G by Onsemi

BF421ZL1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.83W, hFE of 50, and can handle up to 300V collector-emitter voltage. With a transition frequency of 60MHz and operating temperature up to 150 °C, it's suitable for various electronic circuits requiring high-speed switching capabilities.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 69,000 parts In-Stock

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Vyrian

USA . 10,736 parts In-Stock

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Digiode

USA . 2,142 parts In-Stock

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Native Components

USA . 928 parts In-Stock

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$0.213

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$0.205

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Northwest PG Solutions

USA . 1,932 parts In-Stock

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$0.235

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$0.207

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AZTECH Wire

Italy . 322 parts In-Stock

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$15.470

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Problanco Electronics

Mexico . 6,998 parts In-Stock

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TANS Electronics

Latvia . 5,545 parts In-Stock

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Kulean Microsystems

USA . 1,970 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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SupplyDigital Components

Austria . 791 parts In-Stock

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Overview

Upgrade your electronic projects with the BF421ZL1G by Onsemi, a top-quality small signal PNP bipolar junction transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for amplifier applications. With a high DC current gain and low power dissipation, this transistor ensures efficient operation and long-lasting durability. Trust Onsemi to deliver superior products that meet your needs and exceed your expectations. Experience the difference with the BF421ZL1G and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require a PNP transistor, enhancing compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures straightforward utilization of the transistor.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor offers reliable performance and functionality in amplification circuits.

Package Shape: ROUND

The round shape facilitates easy mounting and installation in various electronic devices and equipment.

Terminal Form: THROUGH-HOLE

The through-hole terminals allow for secure and stable connections, ensuring reliable performance in circuitry.

Maximum Power Dissipation (Abs): 0.83 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, enabling robust operation.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain ensures consistent and predictable amplification characteristics, essential for reliable signal processing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance enables the transistor to function effectively in various environmental conditions.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating ensures the transistor can withstand voltage spikes and fluctuations, enhancing longevity.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance, making this transistor a dependable choice.

Maximum Collector Current (IC): 0.05 A

The maximum collector current rating allows for adequate current flow, ensuring efficient operation in various circuit configurations.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish provides corrosion resistance and promotes strong solder connections, enhancing the reliability and longevity of the transistor.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and component placement, streamlining the assembly process.

Nominal Transition Frequency (fT): 60 MHz

With a high nominal transition frequency, this transistor can effectively handle high-frequency signals, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF421ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF421ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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