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BF421RL1

Onsemi

BF421RL1 by Onsemi

BF421RL1 by Onsemi is a PNP BJT with hFE of 50, VCEO of 300V, and IC of 0.5A. Ideal for applications requiring high voltage switching in cylindrical package style with through-hole terminals. Operating up to 150 °C, it suits various electronic designs needing reliable bipolar transistors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,770 parts In-Stock

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Digiode

USA . 1,331 parts In-Stock

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Problanco Electronics

Mexico . 6,858 parts In-Stock

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TANS Electronics

Latvia . 5,217 parts In-Stock

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SupplyDigital Components

Austria . 5,091 parts In-Stock

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Corphita

USA . 2,079 parts In-Stock

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Kulean Microsystems

USA . 1,738 parts In-Stock

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Northwest PG Solutions

USA . 1,671 parts In-Stock

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Native Components

USA . 892 parts In-Stock

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UHIMA Technologies

Türkiye . 456 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Enhance your electronic projects with the BF421RL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers superior performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor is perfect for a wide range of applications. With a maximum collector-emitter voltage of 300V and a maximum collector current of 0.5A, this transistor is ideal for amplification and switching tasks. Invest in the BF421RL1 today and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and makes the product suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits and switching applications, providing versatility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various electronic projects.

Package Shape: ROUND

The round package shape allows for easy handling and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring reliable performance in electronic circuits.

No. of Terminals: 3

Having 3 terminals allows for connection to different parts of a circuit, enabling flexibility in circuit design.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating makes this transistor suitable for circuits that require higher voltage handling.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current loads in various applications.

Nominal Transition Frequency (fT): 60 MHz

The high nominal transition frequency allows for faster switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF421RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF421RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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