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BF421RLRE

Onsemi

BF421RLRE by Onsemi

BF421RLRE by Onsemi is a PNP BJT with hFE of 50, VCEO of 300V, and IC of 0.5A. Ideal for applications requiring high voltage switching in electronic circuits. Package style is cylindrical with through-hole terminals, suitable for various small signal amplification tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,207 parts In-Stock

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1,207

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Vyrian

USA . 522 parts In-Stock

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522

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 235 parts In-Stock

1+ parts

$32.305

100+ parts

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$31.013

235

$32.305

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$31.013

Northwest PG Solutions

USA . 539 parts In-Stock

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$35.536

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539

$35.536

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Problanco Electronics

Mexico . 7,440 parts In-Stock

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7,440

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TANS Electronics

Latvia . 6,836 parts In-Stock

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6,836

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SupplyDigital Components

Austria . 5,497 parts In-Stock

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5,497

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Kulean Microsystems

USA . 3,373 parts In-Stock

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3,373

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Corphita

USA . 946 parts In-Stock

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946

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UHIMA Technologies

Türkiye . 396 parts In-Stock

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Corohmni

South Africa . 309 parts In-Stock

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309

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Overview

Unlock endless possibilities with the BF421RLRE by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) is a game-changer in the world of electronics. From amplifiers to switching circuits, this PNP transistor offers unparalleled performance and reliability. Trust in Onsemi's reputation for excellence and elevate your projects to new heights. Experience the value, benefits, and advantages that the BF421RLRE brings to the table. Elevate your creations with this top-tier component and bring your ideas to life like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in complementary pairs with NPN transistors, offering versatile circuit design options.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to use in various applications.

Package Shape: ROUND

The round shape allows for easy mounting and placement in circuit boards.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and secure connection to the circuit board.

No. of Terminals: 3

Provides necessary connectivity for the transistor to function efficiently.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compact size and efficient thermal dissipation.

Minimum DC Current Gain (hFE): 50

Ensures stable and reliable amplification of current in the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 300 V

Can handle high voltages, providing versatility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels for many small signal applications.

Terminal Finish: TIN LEAD

Provides a reliable and durable connection to the circuit board.

Terminal Position: BOTTOM

Facilitates easy and secure mounting on the circuit board.

Nominal Transition Frequency (fT): 60 MHz

Allows for high-speed switching and amplification in the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF421RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF421RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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