Loading...

BF420ZL1G

Onsemi

BF420ZL1G by Onsemi

BF420ZL1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.05A IC, and 60MHz fT. Ideal for amplifier applications, it has a max power dissipation of 0.83W and operates up to 150 °C. The package is cylindrical with through-hole terminals for easy installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 26,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,000

-

-

-

-

Vyrian

USA . 6,730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,730

-

-

-

-

Digiode

USA . 1,328 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,328

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 497 parts In-Stock

1+ parts

$14.440

100+ parts

-

1k+ parts

-

10k+ parts

-

497

$14.440

-

-

-

Native Components

USA . 220 parts In-Stock

1+ parts

$60.656

100+ parts

-

1k+ parts

-

10k+ parts

$58.230

220

$60.656

-

-

$58.230

Northwest PG Solutions

USA . 1,673 parts In-Stock

1+ parts

$66.722

100+ parts

-

1k+ parts

-

10k+ parts

-

1,673

$66.722

-

-

-

Component Stockers USA

USA . 429 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

429

$99.990

-

-

-

TANS Electronics

Latvia . 4,848 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,848

-

-

-

-

Problanco Electronics

Mexico . 4,814 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,814

-

-

-

-

Kulean Microsystems

USA . 3,875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,875

-

-

-

-

SupplyDigital Components

Austria . 1,406 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,406

-

-

-

-

UHIMA Technologies

Türkiye . 558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

558

-

-

-

-

Corphita

USA . 478 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

478

-

-

-

-

Corohmni

South Africa . 293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

293

-

-

-

-

Overview

Upgrade your electronic projects with the BF420ZL1G by Onsemi. This high-quality NPN transistor offers reliable performance and durability, making it ideal for a wide range of amplifier applications. Manufactured by Onsemi, a trusted name in the industry, this transistor guarantees top-notch quality and precision. Say goodbye to frequent replacements and hello to seamless functionality with the BF420ZL1G. Experience enhanced efficiency and superior results with this versatile and dependable component. Elevate your projects with Onsemi's BF420ZL1G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Makes the transistor lightweight and durable for easy handling and long-lasting use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are easier to work with in many applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring reliable performance in amplifier circuits.

Maximum Power Dissipation: 0.83 W

Can handle a relatively high power dissipation, making it suitable for applications where heat dissipation is a concern.

No. of Terminals: 3

Simplified layout with fewer terminals makes the transistor easier to work with and less likely to have wiring errors.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, increasing its versatility for various application environments.

Maximum Collector-Emitter Voltage: 300 V

Capable of handling high voltage levels, making it suitable for use in circuits with higher voltage requirements.

Nominal Transition Frequency: 60 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF420ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF420ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20