Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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DDTD123YU-7-F
Diodes Incorporated
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
BUILT-IN BIAS RESISTOR RATIO 4.54
.5 A
50 V
SINGLE WITH BUILT-IN RESISTOR
56
R-PDSO-G3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
.2 W
Not Qualified
BIP General Purpose Small Signal
YES
MATTE TIN
GULL WING
DUAL
30
SILICON
200 MHz
DDTD133HC-7-F
BUILT IN BIAS RESISTOR RATIO IS 3.03
DDTD143EC-7-F
BUILT IN BIAS RESISTOR RATIO IS 1
47
DDTD143EU-7-F
BUILT-IN BIAS RESISTOR RATIO 1
DDTD143TC-7-F
BUILT IN BIAS RESISTOR
40 V
100
DDTD143TU-7-F
BUILT-IN BIAS RESISTOR
DDTA115EE-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;
BUILT-IN BIAS RESISTOR RATIO IS 1
.02 A
82
PNP
.15 W
BIP General Purpose Small Signals
250 MHz
DDTA123EE-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
.1 A
20
DDTA124EE-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
.03 A
EMC3DXV5T5
Onsemi
EMC3DXV5T5 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features 2 elements in a cascaded configuration with built-in resistors, ideal for switching applications. With a max collector-emitter voltage of 50V and a power dissipation of 0.5W, it is suitable for surface mount designs requiring compact components.
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
35
R-PDSO-F5
2
5
NPN AND PNP
.5 W
TIN
FLAT
SWITCHING
PZT3906T1
PZT3906T1 by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for applications requiring small outline package style, such as signal amplification in electronic circuits due to its high transition frequency of 250MHz and low turn-on time of 70ns.
COLLECTOR
.2 A
SINGLE
TO-261AA
R-PDSO-G4
e0
4
235
.3 W
Other Transistors
Tin/Lead (Sn/Pb)
300 ns
70 ns
MPSA12RLRA
MPSA12RLRA by Onsemi is a NPN Darlington BJT with hFE of 20000, VCE of 20V, and IC of 0.3A. It is used in applications requiring high DC current gain and operates up to 150 °C. Ideal for amplification tasks due to its high transition frequency of 100MHz.
.3 A
20 V
DARLINGTON
20000
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
BOTTOM
100 MHz
MPSA12RLRP
MPSA12RLRP by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and Vce of 20V. Ideal for applications requiring high DC current gain like amplifiers or switching circuits due to its SILICON transistor element material and THROUGH-HOLE terminal form.
.625 W
TIN LEAD
MMJT9410T1
MMJT9410T1 by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small outline applications requiring high DC current gain and low collector current.
.01 A
30 V
60
3 W
72 MHz
BC847BV-7
BC847BV-7 by Diodes Inc. is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for small signal applications in electronics due to its high transition frequency of 100MHz, low power dissipation of 0.15W, and compact small outline package design. Suitable for surface mount PCBs requiring dual terminal configuration with matte tin finish.
45 V
SEPARATE, 2 ELEMENTS
200
R-PDSO-F6
6
MMBT2907A-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 100 ns;
.6 A
60 V
50
100 ns
45 ns
MMBT3904-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;
300 MHz
250 ns
MMBT3904T-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN LEAD;
MMBT3906-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;
-55 Cel
MMBT3906T-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
4.5 pF
AEC-Q101
.4 V
BC327-016
BC327-016 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.8A, and min DC current gain of 100. With a package style of cylindrical and max power dissipation of 0.625W, it operates at up to 150 °C.
.8 A
AMPLIFIER
260 MHz
BC327-040
BC327-040 by Onsemi is a PNP BJT transistor with hFE of 250, IC of 0.8A, and fT of 260MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and collector-emitter voltage of 45V. This through-hole transistor has a cylindrical package shape made from silicon material.
250
QSL12TR
ROHM
ROHM QSL12TR is a NPN BJT with 5 terminals, 0.5W power dissipation, and 270 min hFE. Ideal for switching applications, it has a max operating temp of 125°C and can handle up to 1A collector current. The transistor's package is surface mountable with Gull Wing terminals in a small outline shape.
1 A
SINGLE WITH BUILT-IN DIODE
270
R-PDSO-G5
e1
125 Cel
TIN SILVER COPPER
10
320 MHz
DMMT5551-7
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;
160 V
R-PDSO-G6
DMMT5401-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
150 V
EMG2DXV5T1
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .338 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80;
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
.338 W
EMG5DXV5T1
The Onsemi EMG5DXV5T1 is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.
BUILT-IN BIAS RESISTOR RATIO IS 4.7
EMZ1DXV6T1
The Onsemi EMZ1DXV6T1 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max collector-emitter voltage of 60V.
120
180 MHz
EMZ1DXV6T5
The Onsemi EMZ1DXV6T5 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max VCE of 60V and IC of 0.1A.
EMD5DXV6T1
EMD5DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features separate elements with built-in resistor for switching applications. With a max VCEsat of 0.25V, it operates in temperatures ranging from -55 to 150 °C, making it suitable for various electronic devices.
BUILT-IN BIAS RESISTOR RATIO IS 2.13
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
.25 V
2N5087G
2N5087G by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 250, and max. collector-emitter voltage of 50V. Ideal for amplifier applications due to its high transition frequency of 40MHz and max. operating temp. of 150°C in a cylindrical package style.
.05 A
1.5 W
40 MHz
DP0150ALP4-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
HIGH RELIABILITY
R-PBCC-N3
e4
CHIP CARRIER
.45 W
NICKEL PALLADIUM GOLD
NO LEAD
80 MHz
2N3904RLRMG
2N3904RLRMG by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for low-power applications like amplification circuits due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.
MBT3904DW2T1
MBT3904DW2T1 by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W, hFE of 30, and operates up to 150 °C. This transistor features Gull Wing terminals, small outline package style, and can handle a max collector-emitter voltage of 40V.
NSBC123JDXV6T5
NSBC123JDXV6T5 by Onsemi is a NPN BJT with 2 elements, built-in resistor, hFE of 80. It has max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications due to its small outline package and silicon element material.
BUILT IN BIAS RESISTOR RATIO 21.36
QSX2TR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 5 A;
5 A
2DB1689-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1.5 A;
1.5 A
12 V
2DB1694-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1 A;
2DB1697-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
2 A
R-PSSO-F3
2 W
140 MHz
2DB1714-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
2DD2661-13
2DD2661-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 2W, hFE of 270, and fT of 170MHz. Ideal for switching applications, it has a max collector-emitter voltage of 12V and max collector current of 2A. Suitable for surface mount with matte tin finish in a small outline package style.
170 MHz
2DD2678-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;
3 A
R-PDSO-F4
DN0150ALP4-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
60 MHz
DN0150BLP4-7
MMDT3904V-7
MMDT3904V-7 by Diodes Inc. is a NPN BJT with 2 elements, suitable for switching applications. It has a max collector-emitter voltage of 40V, max current of 0.2A, and transition frequency of 300MHz. This transistor comes in a small outline package and operates up to 150°C, making it ideal for compact electronic devices.
MMDT3906V-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
STX690A
STMicroelectronics
STX690A by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, a collector current of 3 A, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in circuits.
90
NOT SPECIFIED
.9 W
NUS2401SNT1G
NUS2401SNT1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It has 3 elements, 6 terminals, hFE of 150, max power dissipation of 0.35W, and operates up to 150 °C. With a max VCE of 50V and IC of 0.2A, it's designed for surface mount in a small outline package.
BUILT IN BIAS RESISTORS
COMPLEX
150
.35 W
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