Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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NSBA114YDXV6T1
Onsemi
NSBA114YDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. Ideal for switching applications with max IC of 0.1A and VCE of 50V. Features small outline package style, flat terminals, and surface mount capability.
BUILT IN BIAS RESISTOR RATIO IS 0.21
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
R-PDSO-F6
e3
1
2
6
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
.5 W
Not Qualified
BIP General Purpose Small Signal
YES
TIN
FLAT
DUAL
30
SWITCHING
SILICON
NSBA123EDXV6T1
NSBA123EDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of min. 8. It's used for switching applications with max. VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with flat terminals, suitable for surface mount assembly at peak reflow temp of 260 °C within 30s.
BUILT IN BIAS RESISTOR RATIO IS 1
8
NSBA123JDXV6T1
NSBA123JDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features small outline package, flat terminals, and peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR RATIO IS 0.047
NSBA124EDXV6T1
NSBA124EDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 60. It has a max collector-emitter voltage of 50V and collector current of 0.1A, suitable for switching applications. This surface-mount device in a small outline package is designed for high power dissipation up to 0.5W.
60
NSBA143EDXV6T1
NSBA143EDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 15. It is used for switching applications with max VCE of 50V and IC of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.
15
NSBA143ZDXV6T1
NSBA143ZDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. This small outline transistor in plastic/epoxy package is surface mountable, making it suitable for compact electronic designs.
BUILT IN BIAS RESISTOR RATIO IS 0.1
NSBC113EDXV6T1
NSBC113EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications due to its small outline package style and max collector current of 0.1A. Features flat terminals, tin finish, and peak reflow temp of 260°C for surface mount usage.
3
NPN
NSBC113EPDXV6T1
NSBC113EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max. collector-emitter voltage of 50V, and max. collector current of 0.1A. This transistor comes in a small outline package shape suitable for surface mount assembly.
NPN AND PNP
NSBC114EDXV6T1
NSBC114EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 35. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features small outline package style, flat terminals, and peak reflow temp of 260 °C.
35
NSBC114EPDXV6T1
NSBC114EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistor, max collector-emitter voltage of 50V, and max power dissipation of 0.5W. This surface-mount transistor has a package style of small outline and terminal finish in tin.
NSBC114TDXV6T1
NSBC114TDXV6T1 by Onsemi is a NPN BJT transistor with 2 elements, built-in resistor, and hFE of 160. It has a max collector-emitter voltage of 50V and max current of 0.1A. Ideal for switching applications due to its small outline package and peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR
160
NSBC123EDXV6T1
NSBC123EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a max. power dissipation of 0.5W and max. collector current of 0.1A in a small outline package shape suitable for surface mount technology.
NSBC123JDXV6T1
NSBC123JDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V and IC of 0.1A, suitable for switching applications. This small outline transistor in plastic/epoxy package is surface mountable with 6 terminals for efficient use.
BUILT IN BIAS RESISTOR RATIO 21.36
NSBC123JPDXV6T1
NSBC123JPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors in a small outline package, supporting a max collector-emitter voltage of 50V and max collector current of 0.1A. Suitable for surface mount designs requiring high DC current gain (hFE) above 80.
BUILT IN BIAS RESISTOR RATIO IS 21.36
NSBC124EDXV6T1
NSBC124EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 60. It has a max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications due to its small outline package and silicon material.
NSBC124EPDXV6T1
NSBC124EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and max collector-emitter voltage of 50V. This transistor is surface mountable in a small outline package, suitable for various electronic circuits requiring low to medium power switching capabilities.
150 Cel
NSBC124XDXV6T1
NSBC124XDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications in small outline packages with flat terminals for surface mount technology.
BUILT IN BIAS RESISTOR RATIO 2.14
NSBC143EDXV6T1
NSBC143EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a small outline package style and can handle up to 0.1A collector current.
NSBC143ZDXV6T1
NSBC143ZDXV6T1 by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in small outline packages, it features a peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR RATIO 10
NSBC144EPDXV6T1
NSBC144EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. Ideal for switching applications in compact designs due to its small outline package shape and surface-mount capability.
STPSA42-AP
STMicroelectronics
STPSA42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.
.5 A
300 V
SINGLE
40
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
.625 W
Other Transistors
NO
MATTE TIN
THROUGH-HOLE
BOTTOM
50 MHz
STPSA92-AP
STPSA92-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300 V, power dissipation of 0.625 W, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in compact designs.
MMBT6521LT1
MMBT6521LT1 by Onsemi is a NPN BJT transistor with 300 min hFE, 0.3W power dissipation, and 25V collector-emitter voltage. Ideal for amplifier applications, it features a small outline package style and Gull Wing terminals for surface mount assembly. Operating at up to 150 °C, it offers reliable performance in various electronic circuits.
25 V
300
TO-236AB
R-PDSO-G3
e0
235
.3 W
Tin/Lead (Sn/Pb)
GULL WING
AMPLIFIER
2SC4081RT1
2SC4081RT1 by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 50V and max collector current of 0.1A. With a min DC current gain of 180, it's ideal for amplifier applications. This surface mount transistor has a small outline package style and operates up to 150 °C.
180
.2 W
MSB92ASWT1
MSB92ASWT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 300V, max collector current of 0.5A, and min DC current gain of 25. With a package style of small outline and surface mount capability, it operates at up to 150 °C.
25
.15 W
STX13005
STX13005 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.
3 A
400 V
2.8 W
DIMD10A-7
Diodes Incorporated
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO 100
100
R-PDSO-G6
250 MHz
DDTB122LC-7
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
BUILT-IN BIAS RESISTOR RATIO IS 45.45
SINGLE WITH BUILT-IN RESISTOR
56
TIN LEAD
200 MHz
DDTB122TC-7
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
BUILT-IN BIAS RESISTOR
40 V
DDTC122LE-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;
DDTC122LU-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
BUILT-IN BIAS RESISTANCE RATIO IS 45.45
DDTD122LC-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e0;
DDTD142JC-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;
BUILT-IN BIAS RESISTANCE RATIO IS 21.28
DDTD142JU-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V;
BUILT-IN BIAS RESISTOR RATIO IS 21.28
NSB1706DMW5T1
NSB1706DMW5T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly at peak reflow temp of 235 °C.
BUILT IN BIAS RESISTOR RATIO IS 10
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G5
5
.385 W
DDA114TH-7
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
DDA114YH-7
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .07 A;
BUILT-IN BIAS RESISTOR RATIO 4.7
.07 A
68
DDA143EH-7
BUILT-IN BIAS RESISTOR RATIO 1
20
DDA144EH-7
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
.03 A
DCX114EH-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;
.05 A
DCX114TH-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
DCX123JH-7
BUILT-IN BIAS RESISTOR RATIO 21.36
DCX124EH-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
DCX143EH-7
DCX143TH-7
DDC124EH-7
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
BUILT IN BIAS RESISTOR RATIO 1
DDC143TH-7
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
2DA1774S-7-F
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
.15 A
270
140 MHz
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