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NSB1706DMW5T1

Onsemi

NSB1706DMW5T1 by Onsemi

NSB1706DMW5T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly at peak reflow temp of 235 °C.

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1k+

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Chip Stock

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Component Stockers USA

USA . 6,647 parts In-Stock

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$4.380

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$4.250

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AZTECH Wire

Italy . 184 parts In-Stock

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SupplyDigital Components

Austria . 8,343 parts In-Stock

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TANS Electronics

Latvia . 8,269 parts In-Stock

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Kulean Microsystems

USA . 7,167 parts In-Stock

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Problanco Electronics

Mexico . 5,065 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 537 parts In-Stock

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Overview

Upgrade your electronics with the NSB1706DMW5T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers common emitter configuration with built-in resistors for added convenience. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80, this transistor ensures reliable performance in various electronic devices. Get the value and benefits you deserve with the NSB1706DMW5T1, delivering top-notch quality and efficiency for all your circuit needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic is a lightweight and durable material, making the transistor easy to handle and less prone to damage during handling or installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, providing versatility in circuits.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, while the common emitter configuration allows for easy integration into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such circuits.

Surface Mount: YES

Surface mount technology makes the transistor suitable for automated assembly processes, reducing production costs and improving reliability.

Maximum Power Dissipation (Abs): 0.385 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

The high DC current gain ensures that small input currents can control larger output currents effectively, allowing for efficient signal amplification.

Maximum Collector-Emitter Voltage: 50 V

A 50V maximum voltage rating provides a sufficient safety margin for various applications, preventing damage due to voltage spikes or surges.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, suitable for many low to medium power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead finish ensures reliable solder connections, improving the overall durability and longevity of the transistor in circuit.

Peak Reflow Temperature °C: 235

The high peak reflow temperature allows for robust soldering processes, ensuring secure connections and long-term stability in operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSB1706DMW5T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSB1706DMW5T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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