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NSB1011XV6T5

Onsemi

NSB1011XV6T5 by Onsemi

NSB1011XV6T5 by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. Ideal for switching applications, it comes in a small outline package suitable for surface mount technology.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

88,000

-

$0.053

$0.044

$0.039

Verical

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

88,000

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-

-

$0.049

Distributors (In-Stock)

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Digiode

USA . 2,299 parts In-Stock

1+ parts

$0.041

100+ parts

-

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2,299

$0.041

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Vyrian

USA . 1,673 parts In-Stock

1+ parts

$0.043

100+ parts

-

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1,673

$0.043

-

-

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DigiKey Marketplace

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.050

10k+ parts

-

88,000

-

-

$0.050

-

Chip Stock

USA . 29,000 parts In-Stock

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29,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 825 parts In-Stock

1+ parts

$0.039

100+ parts

-

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825

$0.039

-

-

-

Corohmni

South Africa . 465 parts In-Stock

1+ parts

$0.043

100+ parts

-

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465

$0.043

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-

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Continental Prestige Electronics

USA . 88,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

$0.040

88,000

-

-

-

$0.040

TANS Electronics

Latvia . 8,296 parts In-Stock

1+ parts

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8,296

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SupplyDigital Components

Austria . 4,946 parts In-Stock

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4,946

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Problanco Electronics

Mexico . 4,383 parts In-Stock

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4,383

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Kulean Microsystems

USA . 4,041 parts In-Stock

1+ parts

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4,041

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UHIMA Technologies

Türkiye . 928 parts In-Stock

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928

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Overview

Looking for a reliable solution for your switching applications? Look no further than the NSB1011XV6T5 by Onsemi. With its high-quality design and built-in resistor, this NPN transistor offers unmatched performance and efficiency. Whether you're working on automotive, industrial, or consumer electronics projects, this small signal BJT is the perfect choice. Experience the value and benefits of Onsemi's superior technology with the NSB1011XV6T5. Choose quality, choose reliability, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and durability, making the product resistant to damage and suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product compatible with a wide range of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making the product more efficient and cost-effective.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product offers reliable performance and fast response times.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, enhancing manufacturability and reducing production costs.

Package Shape: RECTANGULAR

The rectangular shape offers a standardized form factor, making it easy to integrate this product into existing circuit designs.

Terminal Form: FLAT

Flat terminals provide a secure connection and enable easy soldering, ensuring a reliable electrical connection.

No. of Elements: 2

Having two elements allows for increased functionality and versatility in circuit design, offering more options for customization.

Maximum Power Dissipation (Abs): 0.5 W

With a high maximum power dissipation, this product can handle power-intensive applications with ease, ensuring optimal performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, providing more room for other components and reducing overall board size.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures consistent and stable performance in amplification applications, offering reliable signal amplification.

Maximum Collector-Emitter Voltage: 50 V

A high maximum collector-emitter voltage rating provides robust voltage handling capabilities, making this product suitable for a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring high performance and durability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this product can handle moderate current levels, making it suitable for a variety of low to medium power applications.

Terminal Finish: TIN

The tin terminal finish provides good conductivity, corrosion resistance, and solderability, ensuring a reliable and long-lasting connection.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in circuit layout and assembly, allowing for easy integration into different types of circuits.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures proper soldering and prevents damage to the product during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability enables efficient and reliable soldering, ensuring a strong bond between the product and the PCB.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSB1011XV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSB1011XV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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