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NSB1011XV6T5G

Onsemi

NSB1011XV6T5G by Onsemi

NSB1011XV6T5G by Onsemi is a NPN BJT with 2 elements, hFE of 35, and IC of 0.1A. Ideal for surface mount applications, it has a max power dissipation of 0.5W. This transistor is commonly used in low-power electronic circuits due to its silicon material and TIN terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,605 parts In-Stock

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1,605

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Vyrian

USA . 1,347 parts In-Stock

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1,347

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Distributors (Availability)

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Problanco Electronics

Mexico . 6,596 parts In-Stock

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6,596

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Kulean Microsystems

USA . 5,557 parts In-Stock

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5,557

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SupplyDigital Components

Austria . 4,275 parts In-Stock

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4,275

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Corphita

USA . 1,721 parts In-Stock

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1,721

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TANS Electronics

Latvia . 1,514 parts In-Stock

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1,514

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UHIMA Technologies

Türkiye . 756 parts In-Stock

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756

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Corohmni

South Africa . 267 parts In-Stock

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Overview

Enhance your electronic projects with the NSB1011XV6T5G by Onsemi! This high-quality Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for a wide range of applications. With its surface mount design, low power dissipation, and high DC current gain, this product provides value and benefits to customers looking for efficient and dependable components for their designs. Upgrade your projects today with the NSB1011XV6T5G from Onsemi!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, making this product versatile and widely compatible.

Surface Mount: YES

Surface mount technology allows for easy and compact PCB assembly, saving space and enabling efficient mass production.

No. of Elements: 2

Having 2 elements in a single package provides flexibility in circuit design and allows for more complex circuit configurations.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures stable and reliable amplification of signals in various circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good thermal stability, making them ideal for demanding applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, providing flexibility in circuit design.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and reliable electrical connections, enhancing the overall durability and performance of the product.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for reliable soldering during assembly processes, leading to improved product quality and longevity.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSB1011XV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

35

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Transistor Element Material:

SILICON

Trade Compliance

NSB1011XV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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