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NSB1010XV5T5

Onsemi

NSB1010XV5T5 by Onsemi

NSB1010XV5T5 by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max power dissipation of 0.5W, hFE of 35, VCE of 50V, and IC of 0.1A. Ideal for switching applications in surface mount designs due to its small outline package style and silicon element material.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 168,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

168,000

-

$0.053

$0.044

$0.039

Verical

USA . 168,000 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.049

168,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 938 parts In-Stock

1+ parts

$0.041

100+ parts

-

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938

$0.041

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Vyrian

USA . 2,300 parts In-Stock

1+ parts

$0.043

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-

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2,300

$0.043

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Chip Stock

USA . 47,000 parts In-Stock

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47,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,069 parts In-Stock

1+ parts

$0.039

100+ parts

-

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2,069

$0.039

-

-

-

Corohmni

South Africa . 292 parts In-Stock

1+ parts

$0.043

100+ parts

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292

$0.043

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-

Continental Prestige Electronics

USA . 168,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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$0.039

168,000

-

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-

$0.039

Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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40,000

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SupplyDigital Components

Austria . 6,474 parts In-Stock

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6,474

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Kulean Microsystems

USA . 5,698 parts In-Stock

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5,698

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Problanco Electronics

Mexico . 5,347 parts In-Stock

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5,347

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TANS Electronics

Latvia . 2,066 parts In-Stock

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2,066

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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477

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Overview

Elevate your electronics projects with the NSB1010XV5T5 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and innovation in small signal bipolar junction transistors. This versatile component offers a multitude of applications in switching, thanks to its NPN and PNP configuration with built-in resistors. With a compact design and high performance, this transistor is perfect for a wide range of projects. Experience the value and benefits of the NSB1010XV5T5 and take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP polarity options allows for versatile circuit design and compatibility with various configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The separate configuration with built-in resistors simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficiency in such scenarios.

Surface Mount: YES

The surface mount option enables easy and efficient mounting on PCBs, saving assembly time and space.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and orientation on the PCB during assembly and soldering.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power requirements without overheating.

Minimum DC Current Gain (hFE): 35

The minimum DC current gain of 35 ensures consistent and stable amplification in various circuit applications.

Maximum Collector-Emitter Voltage: 50V

The maximum collector-emitter voltage of 50V allows for compatibility with a wide range of voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon material provides reliable and consistent performance over a wide range of temperatures and operating conditions.

Maximum Collector Current (IC): 0.1A

With a maximum collector current of 0.1A, this transistor is well-suited for low to moderate current applications.

Terminal Finish: TIN

The tin terminal finish ensures good conductivity and solderability, making it easy to integrate this transistor into circuits.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit design and easy connection to other components.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30s ensures proper soldering and reliable connection during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures proper solder melting and joint formation, leading to reliable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSB1010XV5T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSB1010XV5T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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