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NSB1706DMW5T1G

Onsemi

NSB1706DMW5T1G by Onsemi

NSB1706DMW5T1G by Onsemi is a NPN BJT transistor with 2 elements, built-in resistor, and common emitter configuration. It has a max collector-emitter voltage of 50V, operates up to 150°C, and can handle a max current of 0.1A. Ideal for switching applications in small outline packages with gull wing terminals.

Median Price

$0.081

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 29,141 parts In-Stock

1+ parts

$0.290

100+ parts

$0.110

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$0.072

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$0.055

29,141

$0.290

$0.110

$0.072

$0.055

Avnet

USA . 27,000 parts In-Stock

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Arrow

USA . 12,000 parts In-Stock

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$0.049

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$0.049

Verical

USA . 12,000 parts In-Stock

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$0.061

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$0.061

Farnell

UK . 3,675 parts In-Stock

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$0.088

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$0.058

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$0.047

3,675

-

$0.088

$0.058

$0.047

Element14

Singapore . 3,675 parts In-Stock

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$0.081

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$0.062

3,675

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$0.081

$0.062

Newark

USA . 3,000 parts In-Stock

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$0.107

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$0.070

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$0.107

$0.070

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DigiKey

USA . 2,890 parts In-Stock

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$0.050

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$0.050

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$0.070

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50

$0.070

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Digiode

USA . 2,476 parts In-Stock

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$0.200

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IBS Electronics

USA . 210,000 parts In-Stock

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$0.069

Chip Stock

USA . 102,760 parts In-Stock

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Vyrian

USA . 29,993 parts In-Stock

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NAC Semi

USA . 15,000 parts In-Stock

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$0.048

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$0.048

J2 Sourcing AB

Sweden . 3 parts In-Stock

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Ampacity Inc.

Singapore . 29,754 parts In-Stock

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$0.025

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$0.025

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Corohmni

South Africa . 283 parts In-Stock

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$0.029

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283

$0.029

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Continental Prestige Electronics

USA . 6,815 parts In-Stock

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$0.070

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$0.069

6,815

$0.070

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$0.069

Bastille Electronics

Australia . 800 parts In-Stock

1+ parts

$0.070

100+ parts

$0.066

1k+ parts

$0.063

10k+ parts

$0.062

800

$0.070

$0.066

$0.063

$0.062

Argo Parts USA

USA . 704 parts In-Stock

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$0.070

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$0.068

704

$0.070

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$0.068

Corphita

USA . 320 parts In-Stock

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$0.190

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$0.190

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Aztec Data Supply Inc.

USA . 3,408 parts In-Stock

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$1.459

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Perfect Parts

USA . 190,938 parts In-Stock

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iodParts Technologies Inc.

India . 87,000 parts In-Stock

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Futuretech Components

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Kulean Microsystems

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Problanco Electronics

Mexico . 6,798 parts In-Stock

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Eastek

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Lixinc

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TANS Electronics

Latvia . 3,427 parts In-Stock

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SupplyDigital Components

Austria . 588 parts In-Stock

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UHIMA Technologies

Türkiye . 551 parts In-Stock

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Overview

Enhance your electronic designs with the NSB1706DMW5T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers reliable performance and versatility. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor with a common emitter configuration is ideal for switching applications. With its compact package shape and surface mount capability, it is perfect for space-constrained projects. Experience the value of enhanced efficiency and precision in your circuits with the NSB1706DMW5T1G, where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the components inside the package.

Polarity or Channel Type: NPN

Allows for NPN transistors to operate as amplifiers or switches in electronic circuits.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Offers a versatile configuration for various circuit applications, with built-in resistor for simplified design.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast and efficient switching capabilities.

Surface Mount: YES

Enables easy and efficient mounting onto circuit boards, saving space and facilitating automated assembly processes.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, ensuring safe and reliable operation within the specified range.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for various small signal applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSB1706DMW5T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSB1706DMW5T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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