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NSBC124XDXV6T1

Onsemi

NSBC124XDXV6T1 by Onsemi

NSBC124XDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications in small outline packages with flat terminals for surface mount technology.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 91,950 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

91,950

-

$0.053

$0.044

$0.039

DigiKey

USA . 91,950 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.070

91,950

-

-

-

$0.070

Verical

USA . 91,950 parts In-Stock

1+ parts

-

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$0.049

91,950

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-

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,789 parts In-Stock

1+ parts

$0.041

100+ parts

-

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1,789

$0.041

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Chip Stock

USA . 62,000 parts In-Stock

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62,000

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Vyrian

USA . 8,780 parts In-Stock

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8,780

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Distributors (Availability)

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Corphita

USA . 775 parts In-Stock

1+ parts

$0.039

100+ parts

-

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775

$0.039

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Corohmni

South Africa . 114 parts In-Stock

1+ parts

$0.043

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114

$0.043

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AZTECH Wire

Italy . 574 parts In-Stock

1+ parts

$15.770

100+ parts

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574

$15.770

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Continental Prestige Electronics

USA . 91,950 parts In-Stock

1+ parts

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$0.039

91,950

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$0.039

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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TANS Electronics

Latvia . 7,438 parts In-Stock

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7,438

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SupplyDigital Components

Austria . 6,561 parts In-Stock

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6,561

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Problanco Electronics

Mexico . 4,810 parts In-Stock

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4,810

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Kulean Microsystems

USA . 1,255 parts In-Stock

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1,255

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UHIMA Technologies

Türkiye . 623 parts In-Stock

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623

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Overview

Upgrade your electronics with the NSBC124XDXV6T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers reliability and performance. With 2 elements and built-in resistors, this component provides seamless functionality and ease of use. Perfect for a wide range of electronic devices, this transistor ensures efficient power dissipation and optimal performance. Choose the NSBC124XDXV6T1 for superior quality and unmatched value in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and durability, making the transistor suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves board space, while the separate elements allow for customized connections.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering efficient performance in controlling the flow of current.

Surface Mount: YES

Surface mountable design allows for easy installation on PCBs, saving time and effort in assembly.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and soldering on the circuit board.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation rating, the transistor can handle moderate power loads without overheating.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures efficient amplification of signals, making the transistor ideal for signal processing applications.

Maximum Collector-Emitter Voltage: 50 V

This voltage rating allows the transistor to safely operate in circuits with up to 50 volts, providing reliability in varying voltage conditions.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 ampere of collector current, making it suitable for low to medium power applications.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder connections during assembly, improving overall product quality and durability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC124XDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 2.14

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC124XDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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