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Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
KSB772YSTSTU by Fairchild Semiconductor

KSB772YSTSTU

Fairchild Semiconductor

KSB772YSTSTU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 10W, hFE of 160, and operates at up to 150°C. With a max VCE of 30V and IC of 3A, it offers high performance in a rectangular package suitable for flange mount installations.

3 A

30 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

10 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

80 MHz

KSC1815GRTA by Fairchild Semiconductor

KSC1815GRTA

Fairchild Semiconductor

KSC1815GRTA by Fairchild Semiconductor is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 0.15A. It is commonly used in amplifier applications due to its high transition frequency of 80MHz and cylindrical package style for through-hole mounting.

.15 A

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

KSD1616GTA by Fairchild Semiconductor

KSD1616GTA

Fairchild Semiconductor

KSD1616GTA by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W and can handle a max collector-emitter voltage of 50V. With a min DC current gain of 200 and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

1 A

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616LBU by Fairchild Semiconductor

KSD1616LBU

Fairchild Semiconductor

KSD1616LBU by Fairchild Semiconductor is a NPN BJT transistor with 1A max collector current, 300 min DC current gain, and 160MHz transition frequency. It is commonly used for switching applications due to its 0.75W power dissipation, 50V max collector-emitter voltage, and -55 to +150°C operating temperature range.

1 A

50 V

SINGLE

300

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616YTA by Fairchild Semiconductor

KSD1616YTA

Fairchild Semiconductor

Fairchild Semiconductor's KSD1616YTA is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W, hFE of 135, and fT of 160MHz. With a max collector-emitter voltage of 50V and operating temp up to 150°C, it suits various electronic designs requiring high-speed switching capabilities in compact cylindrical packages.

1 A

50 V

SINGLE

135

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD227YBU by Fairchild Semiconductor

KSD227YBU

Fairchild Semiconductor

Fairchild Semiconductor's KSD227YBU is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min DC current gain of 120 and can handle a max collector current of 0.3 A. With a max operating temperature of 150°C and collector-emitter voltage of 25 V, it comes in a cylindrical package suitable for through-hole mounting.

.3 A

25 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BC548CBU by Fairchild Semiconductor

BC548CBU

Fairchild Semiconductor

BC548CBU by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A. With a min DC current gain of 420, it's ideal for switching applications at up to 150°C operating temperature. The through-hole package style makes it easy to use in various electronic circuits.

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC549CBU by Fairchild Semiconductor

BC549CBU

Fairchild Semiconductor

BC549CBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 420 and max IC of 0.1A. It is used for switching applications, has a max VCE of 30V, and operates up to 150°C. The package is cylindrical with through-hole terminals in matte tin finish.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC560CBU by Fairchild Semiconductor

BC560CBU

Fairchild Semiconductor

Fairchild Semiconductor's BC560CBU is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 420 and nominal transition frequency of 150MHz, it offers high performance in a cylindrical package suitable for through-hole mounting.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

STPSA42 by STMicroelectronics

STPSA42

STMicroelectronics

STPSA42 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STPSA92 by STMicroelectronics

STPSA92

STMicroelectronics

STPSA92 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs with through-hole mounting.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

2N5087BU by Fairchild Semiconductor

2N5087BU

Fairchild Semiconductor

2N5087BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.

LOW NOISE

.1 A

50 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

40 MHz

KSC1845FBU by Fairchild Semiconductor

KSC1845FBU

Fairchild Semiconductor

KSC1845FBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 300, ideal for amplifier applications. It has a max power dissipation of 0.5W and can operate at temperatures up to 150°C. The package style is cylindrical with matte tin terminal finish and through-hole terminal form.

LOW NOISE

.05 A

120 V

SINGLE

300

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

110 MHz

MMBT3904-7 by Diodes Incorporated

MMBT3904-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

SS9013FBU by Fairchild Semiconductor

SS9013FBU

Fairchild Semiconductor

Fairchild Semiconductor SS9013FBU is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 96, and VCE of 20V. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

.5 A

20 V

SINGLE

96

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

SS9015ABU by Fairchild Semiconductor

SS9015ABU

Fairchild Semiconductor

SS9015ABU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.45W, hFE of 60, and fT of 190MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.

LOW NOISE

.1 A

45 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

190 MHz

FMMTL717QTA by Diodes Incorporated

FMMTL717QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 205 MHz; Maximum Collector Current (IC): 1.25 A; Maximum Time At Peak Reflow Temperature (s): 30;

HIGH RELIABILITY

1.25 A

12 V

SINGLE

50

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

205 MHz

DDTC114WUA-7 by Diodes Incorporated

DDTC114WUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC124XUA-7 by Diodes Incorporated

DDTC124XUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

BUILT-IN BIAS RESISTANCE RATIO IS 2.14

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143FUA-7 by Diodes Incorporated

DDTC143FUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 4.68

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143XUA-7 by Diodes Incorporated

DDTC143XUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

10

SILICON

250 MHz

DMMT3904W-7 by Diodes Incorporated

DMMT3904W-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

250 ns

70 ns

DMMT3906W-7 by Diodes Incorporated

DMMT3906W-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: GULL WING;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

300 ns

70 ns

DDTC123EUA-7 by Diodes Incorporated

DDTC123EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143EUA-7 by Diodes Incorporated

DDTC143EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC144EUA-7 by Diodes Incorporated

DDTC144EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA113ZCA-7 by Diodes Incorporated

DDTA113ZCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 33;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA113ZUA-7 by Diodes Incorporated

DDTA113ZUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114GCA-7 by Diodes Incorporated

DDTA114GCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114TCA-7 by Diodes Incorporated

DDTA114TCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114TUA-7 by Diodes Incorporated

DDTA114TUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114WCA-7 by Diodes Incorporated

DDTA114WCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114YCA-7 by Diodes Incorporated

DDTA114YCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Terminal Finish: Tin/Lead (Sn85Pb15);

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

Not Qualified

YES

Tin/Lead (Sn85Pb15)

GULL WING

DUAL

10

SILICON

250 MHz

DDTA114YUA-7 by Diodes Incorporated

DDTA114YUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123JCA-7 by Diodes Incorporated

DDTA123JCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123TUA-7 by Diodes Incorporated

DDTA123TUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123YUA-7 by Diodes Incorporated

DDTA123YUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR RATIO IS 4.54

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA124TCA-7 by Diodes Incorporated

DDTA124TCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA143XCA-7 by Diodes Incorporated

DDTA143XCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 2.12

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA144VUA-7 by Diodes Incorporated

DDTA144VUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1;

BUILT-IN BIAS RESISTOR RATIO IS 0.21

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA144WCA-7 by Diodes Incorporated

DDTA144WCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; Minimum DC Current Gain (hFE): 56;

BUILT-IN BIAS RESISTOR RATIO IS 0.46

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC113TCA-7 by Diodes Incorporated

DDTC113TCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC113ZCA-7 by Diodes Incorporated

DDTC113ZCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114ECA-7 by Diodes Incorporated

DDTC114ECA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 1

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114GCA-7 by Diodes Incorporated

DDTC114GCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114TCA-7 by Diodes Incorporated

DDTC114TCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114WCA-7 by Diodes Incorporated

DDTC114WCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTANCE RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114YCA-7 by Diodes Incorporated

DDTC114YCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTANCE RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz