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Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PDTC143ES,126 by NXP Semiconductors

PDTC143ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Terminals: 3; Terminal Finish: TIN;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

TO-92

R-PBCC-N3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NPN

Not Qualified

YES

TIN

NO LEAD

BOTTOM

SWITCHING

SILICON

PDTC143XK,115 by NXP Semiconductors

PDTC143XK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC143ZK,115 by NXP Semiconductors

PDTC143ZK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 10; Minimum DC Current Gain (hFE): 100;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

3.5 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

100

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

.3 V

PDTC144EEF,115 by NXP Semiconductors

PDTC144EEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: FLAT; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PDTC144EK,115 by NXP Semiconductors

PDTC144EK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC144ES,126 by NXP Semiconductors

PDTC144ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PH2369,112 by NXP Semiconductors

PH2369,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

4 pF

15 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

20 ns

10 ns

.25 V

PMBT5401,215 by NXP Semiconductors

PMBT5401,215

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

150 V

SINGLE

50

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.35 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.5 V

PMBT5401,235 by NXP Semiconductors

PMBT5401,235

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .3 A; Qualification: Not Qualified;

.3 A

6 pF

150 V

SINGLE

50

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.5 V

PMST5401,115 by NXP Semiconductors

PMST5401,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

150 V

SINGLE

50

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

.5 V

PMST5401,135 by NXP Semiconductors

PMST5401,135

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

150 V

SINGLE

50

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

.5 V

PN2222A,116 by NXP Semiconductors

PN2222A,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

40

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2222A,126 by NXP Semiconductors

PN2222A,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2222A,412 by NXP Semiconductors

PN2222A,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2907A,126 by NXP Semiconductors

PN2907A,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

PZT3904,115 by NXP Semiconductors

PZT3904,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Case Connection: COLLECTOR;

COLLECTOR

.2 A

4 pF

40 V

SINGLE

30

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

1.5 W

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

PZT3906,115 by NXP Semiconductors

PZT3906,115

NXP Semiconductors

PZT3906,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 30, and IC of 0.1A. With a max operating temperature of 150°C, it has a fT of 250MHz making it suitable for high-frequency switching circuits.

COLLECTOR

.1 A

4.5 pF

40 V

SINGLE

30

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.5 W

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

300 ns

65 ns

.4 V

2PC1815GR,116 by NXP Semiconductors

2PC1815GR,116

NXP Semiconductors

NXP Semiconductors' 2PC1815GR,116 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for switching applications, it has a max operating temp of 150°C and fT of 80MHz. The package is cylindrical with through-hole terminals, making it suitable for various electronic circuits.

.15 A

3.5 pF

50 V

SINGLE

200

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

PH2369,116 by NXP Semiconductors

PH2369,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;

.2 A

4 pF

15 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

20 ns

10 ns

.25 V

PN2907A,116 by NXP Semiconductors

PN2907A,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

365 ns

40 ns

1.6 V

NSVDTC144TM3T5G by Onsemi

NSVDTC144TM3T5G

Onsemi

NSVDTC144TM3T5G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with matte tin finish is ideal for automotive electronics meeting AEC-Q101 standard.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.6 W

AEC-Q101

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BC846BPN-TP by Micro Commercial Components

BC846BPN-TP

Micro Commercial Components

BC846BPN-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP configuration. It has hFE of 200, VCE of 65V, and fT of 100MHz. Ideal for applications requiring small outline packages, such as amplifiers and signal processing circuits.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

Matte Tin (Sn)

GULL WING

DUAL

10

SILICON

100 MHz

DXT690BP5Q-13 by Diodes Incorporated

DXT690BP5Q-13

Diodes Incorporated

DXT690BP5Q-13 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 60, and VCE max of 45V. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high fT of 150MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

60

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

MMBTA28-13-F by Diodes Incorporated

MMBTA28-13-F

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

.5 A

DARLINGTON

10000

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

125 MHz

NSBA143EDP6T5G by Onsemi

NSBA143EDP6T5G

Onsemi

NSBA143EDP6T5G by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 15. It is used for switching applications with max collector-emitter voltage of 50V and max current of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

15

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.408 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NSBC143EPDP6T5G by Onsemi

NSBC143EPDP6T5G

Onsemi

NSBC143EPDP6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max power dissipation of 0.408W, hFE of 15, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.

BUILT IN BIAS RESISTOR RATIO 1.0

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

15

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.408 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NSM21356DW6T1G by Onsemi

NSM21356DW6T1G

Onsemi

NSM21356DW6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a hFE of 80, Vce of 50V, and Ic of 0.1A. Ideal for switching applications, it comes in a rectangular package with Gull Wing terminals for surface mount assembly.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

2N4401-AP by Micro Commercial Components

2N4401-AP

Micro Commercial Components

2N4401-AP by Micro Commercial Components is a NPN BJT transistor with max. collector-emitter voltage of 40V, min. DC current gain of 40, and transition frequency of 250MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

40 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.6 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

250 MHz

255 ns

35 ns

2SC3279-L-AP by Micro Commercial Components

2SC3279-L-AP

Micro Commercial Components

2SC3279-L-AP by Micro Commercial Components is a NPN BJT with hFE of 140 and fT of 150 MHz. It operates at up to 150°C, handles a max voltage of 10V, and max current of 2A. Ideal for small signal applications in electronics due to its high transition frequency and current capacity.

2 A

10 V

SINGLE

140

TO-92

O-PBCY-W3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

10

SILICON

150 MHz

BC546B-AP by Micro Commercial Components

BC546B-AP

Micro Commercial Components

BC546B-AP by Micro Commercial Components is a NPN bipolar junction transistor (BJT) with a min DC current gain of 200. It is commonly used as an amplifier in various applications. With a max operating temperature of 150°C and a max collector-emitter voltage of 65V, it offers reliable performance.

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

300 MHz

DTC114EE-TP by Micro Commercial Components

DTC114EE-TP

Micro Commercial Components

DTC114EE-TP by Micro Commercial Components is a NPN BJT with built-in resistor for switching applications. It has a max power dissipation of 0.15W, hFE of 30, and fT of 250MHz. This surface mount transistor comes in a small outline package with matte tin finish and dual terminals.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

MPSA92-AP by Micro Commercial Components

MPSA92-AP

Micro Commercial Components

MPSA92-AP by Micro Commercial Components is a PNP BJT with hFE of 80, VCE of 300V, and fT of 50MHz. Ideal for low-power applications in electronics due to its high voltage and current capabilities.

.3 A

300 V

SINGLE

80

TO-92

O-PBCY-W3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

Not Qualified

NO

Matte Tin (Sn)

WIRE

BOTTOM

10

SILICON

50 MHz

2SC1815-GR-AP by Micro Commercial Components

2SC1815-GR-AP

Micro Commercial Components

Micro Commercial Components' 2SC1815-GR-AP is a NPN BJT transistor with hFE of 120, ideal for amplifier applications. With a max VCE of 50V and IC of 0.15A, it operates up to 125°C. Featuring a fT of 80MHz, this through-hole transistor has a cylindrical package body suitable for various electronic designs.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2SC1815-Y-AP by Micro Commercial Components

2SC1815-Y-AP

Micro Commercial Components

Micro Commercial Components' 2SC1815-Y-AP is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 80MHz and operating temperature up to 125°C. Package style is cylindrical with matte tin finish in a plastic/epoxy body.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2SC1815-Y-BP by Micro Commercial Components

2SC1815-Y-BP

Micro Commercial Components

Micro Commercial Components' 2SC1815-Y-BP is a NPN BJT with hFE of 120, VCE of 50V, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 80MHz and operating temperature up to 125°C. The transistor's cylindrical package with matte tin finish makes it suitable for through-hole mounting.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

DCP68-25-13 by Diodes Incorporated

DCP68-25-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

330 MHz

.5 V

DCX68-25-13 by Diodes Incorporated

DCX68-25-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

330 MHz

DCX69-25-13 by Diodes Incorporated

DCX69-25-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

FMMT491-TP by Micro Commercial Components

FMMT491-TP

Micro Commercial Components

FMMT491-TP by Micro Commercial Components is a NPN BJT transistor with 3 terminals, hFE of 80, and max. power dissipation of 0.5W. Ideal for small signal applications in electronics due to its high transition frequency of 150MHz and max. collector-emitter voltage of 60V.

1 A

60 V

SINGLE

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

MMDT3946-TP by Micro Commercial Components

MMDT3946-TP

Micro Commercial Components

MMDT3946-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 40V. Ideal for switching applications, it offers a transition frequency of 300MHz and operates at temperatures up to 150°C.

.2 A

40 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMBT2907AT-TP by Micro Commercial Components

MMBT2907AT-TP

Micro Commercial Components

MMBT2907AT-TP by Micro Commercial Components is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and operates at up to 150°C. Ideal for amplifier applications, it features a min hFE of 100 and can handle a max collector current of 0.6A.

.6 A

60 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

140 MHz

100 ns

45 ns

NSBC144WDP6T5G by Onsemi

NSBC144WDP6T5G

Onsemi

NSBC144WDP6T5G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max power dissipation of 0.408W, hFE of 80, and max collector-emitter voltage of 50V. Ideal for switching applications, this small outline package with matte tin finish operates up to 150 °C.

BUILT IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.408 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NSM11156DW6T1G by Onsemi

NSM11156DW6T1G

Onsemi

NSM11156DW6T1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a min hFE of 35, max VCE of 50V, and max IC of 0.1A. This surface-mount device in a small outline package is designed for high-speed operations in various electronic circuits.

BUILT IN BIAS RESISTOR RATIO IS 1.0

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

35

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NSM46211DW6T1G by Onsemi

NSM46211DW6T1G

Onsemi

NSM46211DW6T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a hFE of 200, Vce of 65V, and Ic of 0.1A. Ideal for switching applications, this surface-mount device comes in a small outline package with Gull Wing terminals.

BUILT IN BIAS RESISTOR RATIO IS 1.0

.1 A

65 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DNLS412E-13 by Diodes Incorporated

DNLS412E-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

12 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DPLS315E-13 by Diodes Incorporated

DPLS315E-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

15 V

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

FMMT493-TP by Micro Commercial Components

FMMT493-TP

Micro Commercial Components

FMMT493-TP by Micro Commercial Components is a NPN BJT with 100V VCEO, 1A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high DC current gain of min 20 hFE. Suitable for surface mount designs requiring a single configuration transistor.

1 A

100 V

SINGLE

20

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

2DD2098R-13 by Diodes Incorporated

2DD2098R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

220 MHz