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Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DCP56-13 by Diodes Incorporated

DCP56-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-16-13 by Diodes Incorporated

DCP56-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DZT591C-13 by Diodes Incorporated

DZT591C-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

MAT01AHZ by Analog Devices

MAT01AHZ

Analog Devices

MAT01AHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.2V, and hFE of 500. Ideal for applications requiring high DC current gain and low collector-emitter voltage. With a max operating temp of 150 °C, it's suitable for circuits demanding precision and reliability.

LOW NOISE

SUBSTRATE

.025 A

45 V

SEPARATE, 2 ELEMENTS

500

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NPN

1.8 W

1.8 W

Not Qualified

Other Transistors

NO

NICKEL PALLADIUM GOLD

WIRE

BOTTOM

SILICON

450 MHz

.2 V

MAT01GHZ by Analog Devices

MAT01GHZ

Analog Devices

MAT01GHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.25V, and hFE of 250. Ideal for applications requiring high frequency performance up to 450MHz, such as RF amplifiers or oscillators. With a max operating temperature of 150°C and collector-emitter voltage of 45V, it offers reliable performance in various electronic circuits.

LOW NOISE

SUBSTRATE

.025 A

45 V

SEPARATE, 2 ELEMENTS

250

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NPN

1.8 W

1.8 W

Not Qualified

Other Transistors

NO

NICKEL PALLADIUM GOLD

WIRE

BOTTOM

SILICON

450 MHz

.25 V

MAT03EHZ by Analog Devices

MAT03EHZ

Analog Devices

MAT03EHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a max VCEsat of 0.1V, hFE of 100, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

100

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

GOLD

WIRE

BOTTOM

AMPLIFIER

SILICON

190 MHz

.1 V

MAT03FHZ by Analog Devices

MAT03FHZ

Analog Devices

MAT03FHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a VCEsat of 0.1V, hFE of 80, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

GOLD

WIRE

BOTTOM

AMPLIFIER

SILICON

190 MHz

.1 V

SN75468NSRG4 by Texas Instruments

SN75468NSRG4

Texas Instruments

SN75468NSRG4 by Texas Instruments is a NPN bipolar junction transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 100V, collector current of 0.5A, and operates b/w 0-70°C. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mounting.

LOGIC LEVEL COMPATIBLE

.5 A

100 V

COMPLEX

R-PDSO-G16

e4

1

7

16

70 Cel

0 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

ULQ2003ADRG4 by Texas Instruments

ULQ2003ADRG4

Texas Instruments

ULQ2003ADRG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. The package is surface mountable with Gull Wing terminals in a small outline style, ideal for compact designs.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULQ2004ADG4 by Texas Instruments

ULQ2004ADG4

Texas Instruments

ULQ2004ADG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and is used for switching applications. The package is surface mountable with GULL WING terminals in a RECTANGULAR shape.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULQ2004ADRG4 by Texas Instruments

ULQ2004ADRG4

Texas Instruments

ULQ2004ADRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and can handle a collector current of 0.5A, making it suitable for switching applications. This surface-mount transistor features a gull wing terminal form and is housed in a small outline rectangular package.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BCR114TE6327 by Infineon Technologies

BCR114TE6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.1 A

30

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR112TE6327 by Infineon Technologies

BCR112TE6327

Infineon Technologies

Infineon's BCR112TE6327 is a NPN BJT with 0.1A max collector current, 0.25W power dissipation, and hFE of 20. Ideal for surface mount applications in small signal circuits requiring SILICON transistor elements.

.1 A

20

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR192TE6327 by Infineon Technologies

BCR192TE6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

70

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR162TE6327 by Infineon Technologies

BCR162TE6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

20

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR142TE6327 by Infineon Technologies

BCR142TE6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 70;

.1 A

70

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR153TE6327 by Infineon Technologies

BCR153TE6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

20

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

EMF21-7 by Diodes Incorporated

EMF21-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

UMG4N-7 by Diodes Incorporated

UMG4N-7

Diodes Incorporated

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G5

e3

1

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

BCX5610H6327XTSA1 by Infineon Technologies

BCX5610H6327XTSA1

Infineon Technologies

BCX5610H6327XTSA1 by Infineon is a NPN BJT transistor with 80V VCEO, 1A IC, and 2W Ptot. Ideal for amplifier applications, it has a hFE of 63 and fT of 100MHz. This small outline package with flat terminals operates up to 150°C, making it suitable for various electronic designs.

COLLECTOR

1 A

80 V

SINGLE

63

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

Other Transistors

YES

TIN

FLAT

SINGLE

40

AMPLIFIER

SILICON

100 MHz

2DB1188P-13 by Diodes Incorporated

2DB1188P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

120 MHz

2DD1664P-13 by Diodes Incorporated

2DD1664P-13

Diodes Incorporated

2DD1664P-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 82, and fT of 280MHz. Ideal for switching applications, it has a max collector-emitter voltage of 32V and max collector current of 1A. Suitable for surface mount with single terminal position in small outline package style.

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

280 MHz

2DD2150R-13 by Diodes Incorporated

2DD2150R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

160 MHz

2DB1132P-13 by Diodes Incorporated

2DB1132P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

2DB1132Q-13 by Diodes Incorporated

2DB1132Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

2DB1386Q-13 by Diodes Incorporated

2DB1386Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .005 A;

COLLECTOR

.005 A

20 V

SINGLE

120

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

100 MHz

2DD1766P-13 by Diodes Incorporated

2DD1766P-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .002 A;

COLLECTOR

.002 A

32 V

SINGLE

82

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz

2DD1766Q-13 by Diodes Incorporated

2DD1766Q-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .002 A;

COLLECTOR

.002 A

32 V

SINGLE

120

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz

2DD1766R-13 by Diodes Incorporated

2DD1766R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .002 A;

COLLECTOR

.002 A

32 V

SINGLE

180

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz

DCX51-13 by Diodes Incorporated

DCX51-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

45 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX51-16-13 by Diodes Incorporated

DCX51-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

45 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX52-13 by Diodes Incorporated

DCX52-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

63

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DCX52-16-13 by Diodes Incorporated

DCX52-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DCX53-13 by Diodes Incorporated

DCX53-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

80 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX53-16-13 by Diodes Incorporated

DCX53-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

80 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX54-13 by Diodes Incorporated

DCX54-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

45 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX54-16-13 by Diodes Incorporated

DCX54-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

45 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

200 MHz

DCX55-13 by Diodes Incorporated

DCX55-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

60 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX55-16-13 by Diodes Incorporated

DCX55-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

60 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX56-13 by Diodes Incorporated

DCX56-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

80 V

SINGLE

63

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX56-16-13 by Diodes Incorporated

DCX56-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .001 A;

COLLECTOR

.001 A

80 V

SINGLE

100

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

200 MHz

DCX68-13 by Diodes Incorporated

DCX68-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

330 MHz

DCX69-16-13 by Diodes Incorporated

DCX69-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DXT3150-13 by Diodes Incorporated

DXT3150-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .005 A;

COLLECTOR

.005 A

25 V

SINGLE

250

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

220 MHz

MMS8550-H-TP by Micro Commercial Components

MMS8550-H-TP

Micro Commercial Components

MMS8550-H-TP by Micro Commercial Components is a PNP BJT with 3 terminals, hFE of 200, and max. power dissipation of 0.3W. Ideal for small outline applications requiring a max. collector-emitter voltage of 25V, operating temp up to 150°C, and transition frequency of 150MHz.

.5 A

25 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

DZT851-13 by Diodes Incorporated

DZT851-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 6 A;

COLLECTOR

6 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

130 MHz

DZT953-13 by Diodes Incorporated

DZT953-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

100 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

125 MHz

2DB1119S-13 by Diodes Incorporated

2DB1119S-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

25 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

200 MHz