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MAT01GHZ

Analog Devices

MAT01GHZ by Analog Devices

MAT01GHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.25V, and hFE of 250. Ideal for applications requiring high frequency performance up to 450MHz, such as RF amplifiers or oscillators. With a max operating temperature of 150°C and collector-emitter voltage of 45V, it offers reliable performance in various electronic circuits.

Median Price

$25.055

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Analog Devices Inc

USA . 302 parts In-Stock

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$30.350

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$18.560

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Rochester

USA . 1 parts In-Stock

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$19.760

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$17.680

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$16.640

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$16.640

Distributors (In-Stock)

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Digiode

USA . 816 parts In-Stock

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$25.070

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Vyrian

USA . 6,188 parts In-Stock

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Chip Stock

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Nova Conductors

Japan . 45 parts In-Stock

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Cyclops Electronics Ltd

UK . 39 parts In-Stock

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Parana Technologies

USA . 10,274 parts In-Stock

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$1.098

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$1.021

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$1.098

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IDEA Electronic Components Group

UK . 2,221 parts In-Stock

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$1.181

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$1.122

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$1.181

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DigiPath Technology Company

USA . 856 parts In-Stock

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$1.842

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$1.769

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$1.842

$1.769

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Andel Nordic

Denmark . 267 parts In-Stock

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$7.880

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$5.513

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$5.513

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$7.880

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$5.513

Semicontronic

India . 49 parts In-Stock

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$19.460

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$18.974

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$18.876

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Ampacity Inc.

Singapore . 22 parts In-Stock

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Corphita

USA . 414 parts In-Stock

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Lixinc

USA . 18,176 parts In-Stock

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Kepictronics

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Perfect Parts

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Aranea Global

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Overview

Elevate your electronic designs with the MAT01GHZ by Analog Devices, a high-quality small signal bipolar junction transistor that boasts superior performance and reliability. Analog Devices' reputation as a leading manufacturer guarantees top-notch quality and precision engineering in every product. Ideal for a wide range of applications, this NPN transistor offers customers unmatched value, benefits, and advantages. Whether you're working on audio amplifiers, RF circuits, or sensor interfaces, the MAT01GHZ delivers exceptional performance and efficiency, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent thermal conductivity, allowing for efficient heat dissipation and ensuring the transistor operates at optimal temperatures for improved performance and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits due to their high input impedance and fast switching speeds, making this transistor versatile for various applications.

Maximum VCEsat: 0.25 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction when the transistor is in saturation, resulting in low power dissipation and energy efficiency in the circuit.

No. of Terminals: 6

Having 6 terminals allows for flexibility in circuit connection and enables the transistor to be used in more complex electronic designs.

Maximum Power Dissipation (Abs): 1.8 W

With a high maximum power dissipation rating, this transistor can handle larger current loads and operate reliably in challenging conditions without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications where heat resistance is critical.

Nominal Transition Frequency (fT): 450 MHz

The high transition frequency allows for the transistor to switch rapidly between on and off states, enabling high-frequency signal amplification and modulation in RF and microwave circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT01GHZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

MAT01GHZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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