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MAT02BIEH

Analog Devices

MAT02BIEH by Analog Devices

MAT02BIEH by Analog Devices is a NPN BJT with 2 elements and built-in diode, ideal for amplifier applications. It features VCEsat of 0.1V, hFE of 500, and max operating temp of 150°C. With a max collector-emitter voltage of 40V and fT of 200MHz, it offers high performance in a cylindrical package.

Median Price

$5.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 700 parts In-Stock

1+ parts

$5.000

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$3.480

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700

$5.000

$3.480

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Vyrian

USA . 8,488 parts In-Stock

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-

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8,488

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R&J Components

USA . 800 parts In-Stock

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800

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Digiode

USA . 90 parts In-Stock

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90

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Distributors (Availability)

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Parana Technologies

USA . 24,739 parts In-Stock

1+ parts

$1.735

100+ parts

-

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$1.614

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24,739

$1.735

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$1.614

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IDEA Electronic Components Group

UK . 1,572 parts In-Stock

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$1.866

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$1.773

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1,572

$1.866

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$1.773

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DigiPath Technology Company

USA . 688 parts In-Stock

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$2.911

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$2.795

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688

$2.911

$2.795

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One Stop Electronics

USA . 471 parts In-Stock

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$17.050

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471

$17.050

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AZTECH Wire

Italy . 702 parts In-Stock

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$17.771

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702

$17.771

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Semicontronic

India . 168 parts In-Stock

1+ parts

$54.050

100+ parts

$52.699

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$52.428

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168

$54.050

$52.699

$52.428

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Microchip USA

USA . 5,406 parts In-Stock

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5,406

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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4,100

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Corphita

USA . 762 parts In-Stock

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762

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Overview

Unlock the power of innovation with the MAT02BIEH by Analog Devices. Designed with precision and reliability in mind, this Small Signal Bipolar Junction Transistor (BJT) offers unmatched performance for amplifier applications. With a maximum VCEsat of 0.1V and a minimum DC current gain of 500, this NPN transistor delivers exceptional results. Its cylindrical package body material ensures durability while its built-in diode configuration adds versatility to your projects. Experience the difference with Analog Devices - where quality meets excellence.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity and mechanical durability, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for more versatile circuit design options and the built-in diode adds functionality.

Maximum VCEsat: 0.1 V

Low VCEsat value indicates high efficiency and minimal power loss, making this transistor energy-efficient.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circuit designs.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting the transistor in various circuit configurations.

Maximum Power Dissipation Ambient: 1.8 W

High power dissipation capability allows the transistor to handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 500

High DC current gain ensures stable and reliable amplification of input signals.

Maximum Collector-Emitter Voltage: 40 V

High collector-emitter voltage rating allows for operation in circuits with higher voltage levels.

Maximum Collector Current (IC): 0.02 A

Sufficient collector current rating for many amplifier applications and circuits with moderate power requirements.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency indicates good high-frequency response, making this transistor suitable for high-speed amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT02BIEH attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Trade Compliance

MAT02BIEH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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