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MAT-01NBCG

Analog Devices

MAT-01NBCG by Analog Devices

MAT-01NBCG by Analog Devices is a PNP BJT with 2 separate elements for amplifier applications. It has a max VCEsat of 0.25V, hFE of 250, and operates up to 150°C. This surface-mount transistor features a max IC of 0.025A and fT of 450MHz in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,777 parts In-Stock

1+ parts

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3,777

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Digiode

USA . 581 parts In-Stock

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581

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 17,953 parts In-Stock

1+ parts

$0.588

100+ parts

-

1k+ parts

$0.547

10k+ parts

-

17,953

$0.588

-

$0.547

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IDEA Electronic Components Group

UK . 970 parts In-Stock

1+ parts

$0.632

100+ parts

$0.600

1k+ parts

$0.600

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-

970

$0.632

$0.600

$0.600

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DigiPath Technology Company

USA . 396 parts In-Stock

1+ parts

$0.986

100+ parts

$0.946

1k+ parts

-

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396

$0.986

$0.946

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Ampacity Inc.

Singapore . 842 parts In-Stock

1+ parts

$10.050

100+ parts

-

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842

$10.050

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One Stop Electronics

USA . 1,157 parts In-Stock

1+ parts

$15.050

100+ parts

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1,157

$15.050

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AZTECH Wire

Italy . 435 parts In-Stock

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$17.128

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435

$17.128

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Semicontronic

India . 1,162 parts In-Stock

1+ parts

$62.050

100+ parts

$60.499

1k+ parts

$60.188

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1,162

$62.050

$60.499

$60.188

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Corphita

USA . 832 parts In-Stock

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832

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Overview

Upgrade your electronic projects with the MAT-01NBCG by Analog Devices, a high-quality PNP small signal bipolar junction transistor. Manufactured by the reputable Analog Devices, this product offers exceptional performance as an amplifier in various applications. With a maximum VCEsat of 0.25V and a minimum DC current gain of 250, this transistor guarantees efficient power dissipation and reliable operation even at temperatures up to 150°C. Say goodbye to technical headaches and hello to seamless functionality with the MAT-01NBCG - the perfect choice for your next project.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making it suitable for amplifier applications.

Maximum VCEsat: 0.25 V

Low VCEsat enhances efficiency and reduces power losses in amplifier circuits.

Maximum Power Dissipation Ambient: 1.8 W

High power dissipation capability allows the transistor to handle larger power levels without overheating.

Minimum DC Current Gain (hFE): 250

High DC current gain ensures stable and accurate amplification of signals.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to function reliably even in harsh environments.

Maximum Collector-Emitter Voltage: 45 V

Can handle higher voltages, making it suitable for various amplifier applications.

Nominal Transition Frequency (fT): 450 MHz

High transition frequency allows for high-speed switching and amplification of signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT-01NBCG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-XUUC-N6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

MAT-01NBCG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.40

SB

8541.29.00.40

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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