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MAT01AHZ

Analog Devices

MAT01AHZ by Analog Devices

MAT01AHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.2V, and hFE of 500. Ideal for applications requiring high DC current gain and low collector-emitter voltage. With a max operating temp of 150 °C, it's suitable for circuits demanding precision and reliability.

Median Price

$39.365

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3 parts In-Stock

1+ parts

$33.030

100+ parts

$31.050

1k+ parts

$28.080

10k+ parts

-

3

$33.030

$31.050

$28.080

-

Analog Devices Inc

USA . 4,435 parts In-Stock

1+ parts

$45.700

100+ parts

-

1k+ parts

$27.840

10k+ parts

-

4,435

$45.700

-

$27.840

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 727 parts In-Stock

1+ parts

$31.378

100+ parts

-

1k+ parts

-

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727

$31.378

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-

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Vyrian

USA . 2,864 parts In-Stock

1+ parts

-

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-

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2,864

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-

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Chip Stock

USA . 225 parts In-Stock

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225

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 9,093 parts In-Stock

1+ parts

$0.572

100+ parts

-

1k+ parts

$0.532

10k+ parts

-

9,093

$0.572

-

$0.532

-

IDEA Electronic Components Group

UK . 1,588 parts In-Stock

1+ parts

$0.615

100+ parts

$0.584

1k+ parts

$0.584

10k+ parts

-

1,588

$0.615

$0.584

$0.584

-

DigiPath Technology Company

USA . 1,428 parts In-Stock

1+ parts

$0.959

100+ parts

$0.921

1k+ parts

-

10k+ parts

-

1,428

$0.959

$0.921

-

-

AZTECH Wire

Italy . 901 parts In-Stock

1+ parts

$15.490

100+ parts

-

1k+ parts

-

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901

$15.490

-

-

-

Semicontronic

India . 82 parts In-Stock

1+ parts

$28.080

100+ parts

$27.378

1k+ parts

$27.238

10k+ parts

-

82

$28.080

$27.378

$27.238

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Ampacity Inc.

Singapore . 3 parts In-Stock

1+ parts

$28.080

100+ parts

-

1k+ parts

-

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3

$28.080

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-

-

Corphita

USA . 536 parts In-Stock

1+ parts

$29.727

100+ parts

-

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536

$29.727

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-

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RC Electronics

USA . 18,045 parts In-Stock

1+ parts

-

100+ parts

$1.410

1k+ parts

$1.330

10k+ parts

$1.310

18,045

-

$1.410

$1.330

$1.310

Microchip USA

USA . 4,492 parts In-Stock

1+ parts

-

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4,492

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Kepictronics

USA . 285 parts In-Stock

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285

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Perfect Parts

USA . 91 parts In-Stock

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91

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Overview

Elevate your electronic designs with the high-quality MAT01AHZ by Analog Devices. As a leader in the industry, Analog Devices delivers top-notch Small Signal Bipolar Junction Transistors (BJTs) like no other. With its NPN polarity and separate, 2-element configuration, this transistor offers unmatched performance and reliability. Perfect for a wide range of applications, the MAT01AHZ provides customers with exceptional value, benefits, and advantages. Take your projects to the next level with Analog Devices' MAT01AHZ - the ultimate choice for all your transistor needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good heat dissipation, making this transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile and widely applicable.

Maximum VCEsat: 0.2 V

Low VCEsat means lower power loss and better efficiency in switching applications.

Configuration: SEPARATE, 2 ELEMENTS

Separate configuration allows for independent control of each element, offering flexibility in circuit design.

Maximum Power Dissipation (Abs): 1.8 W

High power dissipation rating allows for reliable operation in various high-power applications.

Nominal Transition Frequency (fT): 450 MHz

High transition frequency enables high-frequency operation, making this transistor suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT01AHZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

MAT01AHZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

NSN

5962-01-605-6415, 5962016056415

NIIN

016056415

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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