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MAT01AH/883C

Analog Devices

MAT01AH/883C by Analog Devices

MAT01AH/883C by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.2V, and hFE of 500. Ideal for applications requiring high gain and low saturation voltage. With a max operating temp of 150°C, it's suitable for circuits demanding precision and reliability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,059 parts In-Stock

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Digiode

USA . 54 parts In-Stock

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Parana Technologies

USA . 12,003 parts In-Stock

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$1.125

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$1.047

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12,003

$1.125

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$1.047

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IDEA Electronic Components Group

UK . 69 parts In-Stock

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$1.210

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$1.150

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DigiPath Technology Company

USA . 223 parts In-Stock

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$1.888

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$1.812

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AZTECH Wire

Italy . 858 parts In-Stock

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$15.217

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858

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One Stop Electronics

USA . 1,221 parts In-Stock

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$27.050

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Ampacity Inc.

Singapore . 915 parts In-Stock

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$30.050

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915

$30.050

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Semicontronic

India . 310 parts In-Stock

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$36.050

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$35.149

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$34.968

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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Kepictronics

USA . 1,050 parts In-Stock

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Corphita

USA . 366 parts In-Stock

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Overview

Looking for reliable and high-quality small signal bipolar junction transistors? Look no further than the MAT01AH/883C by Analog Devices. With a manufacturer renowned for their exceptional products, this NPN transistor offers two separate elements in a metal package, providing customers with superior performance and reliability. Ideal for a variety of applications, this transistor boasts a low VCEsat of 0.2V and a minimum DC current gain of 500, ensuring efficiency and accuracy in your circuits. Trust Analog Devices to deliver the value and benefits you need for your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent heat dissipation, increasing the reliability and longevity of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for various applications.

Maximum VCEsat: 0.2 V

Low VCEsat value ensures minimal power dissipation and high efficiency in the circuit.

Package Shape: ROUND

Round package shape allows for easy mounting and handling in applications.

No. of Elements: 2

Having two elements in the transistor allows for more complex circuit configurations and increased functionality.

Maximum Operating Temperature: 150 °C

High maximum operating temperature makes this transistor suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating allows for use in circuits with higher voltages.

Nominal Transition Frequency (fT): 450 MHz

High transition frequency enables high-speed switching capabilities in the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT01AH/883C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

MAT01AH/883C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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