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MAT02AH/883

Analog Devices

MAT02AH/883 by Analog Devices

MAT02AH/883 by Analog Devices is a NPN BJT with 2 elements, built-in diode, and 0.1V VCEsat. Ideal for amplifier applications, it has 500 min hFE, 40V VCEO, and 200MHz fT. Package style is cylindrical with metal body material and wire terminals.

Median Price

$37.107

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 4 parts In-Stock

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$37.107

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$37.107

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Vyrian

USA . 7,065 parts In-Stock

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Digiode

USA . 829 parts In-Stock

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829

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Electronics Depot

USA . 20 parts In-Stock

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Resion

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Mil-Aero Solutions, Inc.

USA . 1 parts In-Stock

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Parana Technologies

USA . 9,543 parts In-Stock

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$1.461

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$1.359

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$1.461

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IDEA Electronic Components Group

UK . 841 parts In-Stock

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$1.571

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$1.492

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841

$1.571

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DigiPath Technology Company

USA . 1,438 parts In-Stock

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$2.451

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$2.353

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AZTECH Wire

Italy . 816 parts In-Stock

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$7.555

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$7.555

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Semicontronic

India . 915 parts In-Stock

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$33.050

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$32.224

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$32.058

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915

$33.050

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One Stop Electronics

USA . 564 parts In-Stock

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$45.050

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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Corphita

USA . 463 parts In-Stock

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Overview

Upgrade your amplification game with the MAT02AH/883 from Analog Devices, a high-quality Small Signal BJT transistor with built-in diode elements. Perfect for amplifier applications, this NPN transistor offers exceptional performance and reliability, thanks to Analog Devices' reputation for superior manufacturing standards. With a low VCEsat of 0.1V and a minimum DC current gain of 500, this transistor provides excellent value and versatility for your electronic projects. Trust Analog Devices to deliver top-of-the-line components for all your amplification needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and low noise operation.

Maximum VCEsat: 0.1 V

Low VCEsat ensures minimal voltage drop across the collector-emitter junction, enhancing the efficiency of the amplifier circuit.

No. of Elements: 2

Having 2 separate elements with built-in diode allows for more flexibility in circuit design and functionality.

Maximum Power Dissipation Ambient: 1.8 W

The high power dissipation rating enables the transistor to handle increased load conditions without overheating.

Minimum DC Current Gain (hFE): 500

A high DC current gain ensures the transistor provides consistent amplification of input signals with minimal distortion.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand elevated temperatures in various applications.

Maximum Collector-Emitter Voltage: 40 V

The 40V maximum collector-emitter voltage rating allows the transistor to be used in circuits with higher voltage requirements.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency indicates excellent high-frequency performance, making the transistor suitable for radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT02AH/883 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Trade Compliance

MAT02AH/883 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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