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MAT01AH

Analog Devices

MAT01AH by Analog Devices

MAT01AH by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.2V, and hFE of 500. Ideal for applications requiring high DC current gain and low collector-emitter voltage, such as amplifiers or signal processing circuits. Operating temperature ranges from -55 to 150°C with a max power dissipation of 1.8W.

Median Price

$76.230

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Analog Devices Inc

USA . 5,228 parts In-Stock

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$76.230

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$46.360

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Freelance Electronics

USA . 8 parts In-Stock

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$19.156

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$20.114

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$18.965

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8

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$18.965

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TEDSS.com

USA . 5 parts In-Stock

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$19.990

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$19.990

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Bristol Electronics

USA . 10 parts In-Stock

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$39.195

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$39.195

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Digiode

USA . 772 parts In-Stock

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$62.976

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Vyrian

USA . 47 parts In-Stock

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Chip Stock

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Diverse Electronics

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Q Components

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Mil-Aero Solutions, Inc.

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ComSIT Distribution GmbH

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First Choice Components Inc.

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Atlantic Semiconductor

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Electronic Expediters

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Lakeland Logistics Inc

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Prism Electronics

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Distributors (Availability)

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Parana Technologies

USA . 18,245 parts In-Stock

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$1.094

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$1.017

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$1.094

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IDEA Electronic Components Group

UK . 383 parts In-Stock

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$1.176

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$1.117

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DigiPath Technology Company

USA . 1,580 parts In-Stock

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$1.835

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$1.761

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$1.835

$1.761

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Ampacity Inc.

Singapore . 5,087 parts In-Stock

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$56.350

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Semicontronic

India . 4,957 parts In-Stock

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$56.350

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$54.941

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$54.660

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Corphita

USA . 485 parts In-Stock

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$59.661

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Component Stockers USA

USA . 290 parts In-Stock

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$99.990

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Microchip USA

USA . 3,844 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Assy Fe

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Perfect Parts

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Overview

Elevate your electronic designs with the Analog Devices MAT01AH small signal bipolar junction transistor. Crafted with precision by a renowned manufacturer, this NPN transistor offers impeccable quality and reliability. With its sleek cylindrical package shape and wire terminal form, this transistor is perfect for a variety of applications. Experience the benefits of a high DC current gain, low VCEsat, and impressive power dissipation capabilities. Trust in the MAT01AH to deliver superior performance and efficiency for all your circuit needs. Upgrade your projects today with this top-of-the-line component.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides good thermal conductivity and durability, making the transistor suitable for high power dissipation applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile in various electronic applications.

Maximum VCEsat: 0.2 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, ensuring efficient performance and reduced power losses.

Package Shape: ROUND

The round package shape allows for easy mounting and provides uniform stress distribution, enhancing reliability in different mounting orientations.

Maximum Power Dissipation Ambient: 1.8 W

The high maximum power dissipation allows the transistor to handle substantial power loads without overheating, ensuring stable operation in demanding conditions.

Minimum DC Current Gain (hFE): 500

The high minimum DC current gain ensures consistent and reliable amplification of current in various circuit designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range makes the transistor suitable for applications that require extended operation in elevated temperature environments.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating provides a wide voltage handling capability, allowing the transistor to be used in a variety of circuit configurations.

Nominal Transition Frequency (fT): 450 MHz

The high nominal transition frequency indicates the transistor's ability to switch signals at high frequencies, making it suitable for RF and high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT01AH attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

MAT01AH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

NSN

5961-01-014-9698, 5961010149698

NIIN

010149698

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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