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MAT-01N

Analog Devices

MAT-01N by Analog Devices

MAT-01N by Analog Devices is a PNP BJT with 2 separate elements for amplifier applications. It has a max VCEsat of 0.25V, hFE of 250, and operates up to 150°C. This surface-mount transistor features a rectangular package style, can handle up to 1.8W power dissipation, and offers a transition frequency of 450MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,974 parts In-Stock

1+ parts

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4,974

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Digiode

USA . 564 parts In-Stock

1+ parts

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564

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ES Components

USA . 225 parts In-Stock

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225

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 6,881 parts In-Stock

1+ parts

$1.814

100+ parts

-

1k+ parts

$1.687

10k+ parts

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6,881

$1.814

-

$1.687

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IDEA Electronic Components Group

UK . 1,316 parts In-Stock

1+ parts

$1.950

100+ parts

-

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$1.852

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1,316

$1.950

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$1.852

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DigiPath Technology Company

USA . 2,266 parts In-Stock

1+ parts

$3.042

100+ parts

$2.920

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-

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2,266

$3.042

$2.920

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AZTECH Wire

Italy . 600 parts In-Stock

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$12.865

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600

$12.865

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One Stop Electronics

USA . 902 parts In-Stock

1+ parts

$18.050

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902

$18.050

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Semicontronic

India . 503 parts In-Stock

1+ parts

$29.050

100+ parts

$28.324

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$28.178

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503

$29.050

$28.324

$28.178

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Corphita

USA . 499 parts In-Stock

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499

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Overview

The MAT-01N by Analog Devices is a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. With its PNP polarity and amplifier configuration, this transistor is perfect for a wide range of applications. Featuring a low VCEsat and high DC current gain, it provides excellent value and benefits to customers looking for superior amplification capabilities. Trust Analog Devices, a renowned manufacturer known for producing high-quality electronic components, and experience the advantages that the MAT-01N can bring to your projects.

Feature Benefit Bullets

Polarity/Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product suitable for amplification applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design, offering enhanced performance and customization options.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Being surface mountable makes it easier to integrate into compact electronic devices and PCBs.

Maximum VCEsat: 0.25 V

Low VCEsat ensures efficient operation and minimal power loss in the amplifier circuit.

Package Shape: RECTANGULAR

Rectangular shape offers easy mounting and space-saving design for compact electronic applications.

No. of Elements: 2

Dual-element design provides increased functionality and performance in amplifier circuits.

Maximum Power Dissipation Ambient: 1.8 W

High power dissipation capability ensures reliable operation in demanding amplifier applications.

Minimum DC Current Gain (hFE): 250

High DC current gain allows for greater amplification of signals with minimal distortion.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliability in various environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating allows for amplification of signals with higher voltage levels.

Transistor Element Material: SILICON

Silicon material provides reliable and efficient performance in amplifier circuits.

Maximum Collector Current (IC): 0.025 A

Sufficient collector current rating for amplification of signals in small signal applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures reliable solder connections for secure mounting on PCBs.

Terminal Position: UPPER

Upper terminal position enables easy and convenient connections in circuit layouts.

Nominal Transition Frequency (fT): 450 MHz

High transition frequency allows for amplification of high-frequency signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT-01N attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-XUUC-N6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

MAT-01N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.40

SB

8541.29.00.40

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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