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MAT02-913H

Analog Devices

MAT02-913H by Analog Devices

MAT02-913H by Analog Devices is a NPN BJT with 2 elements, hFE of 500, and VCE of 40V. Ideal for applications requiring low DC current gain transistors in cylindrical packages with wire terminals. Operating temperature up to 125 °C makes it suitable for various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,034 parts In-Stock

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5,034

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Digiode

USA . 416 parts In-Stock

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416

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 13,811 parts In-Stock

1+ parts

$1.650

100+ parts

-

1k+ parts

$1.534

10k+ parts

-

13,811

$1.650

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$1.534

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IDEA Electronic Components Group

UK . 1 parts In-Stock

1+ parts

$1.774

100+ parts

-

1k+ parts

$1.685

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1

$1.774

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$1.685

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DigiPath Technology Company

USA . 994 parts In-Stock

1+ parts

$2.767

100+ parts

$2.657

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-

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994

$2.767

$2.657

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AZTECH Wire

Italy . 692 parts In-Stock

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$17.801

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692

$17.801

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One Stop Electronics

USA . 1,401 parts In-Stock

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$23.050

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1,401

$23.050

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Semicontronic

India . 615 parts In-Stock

1+ parts

$24.050

100+ parts

$23.449

1k+ parts

$23.328

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615

$24.050

$23.449

$23.328

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Corphita

USA . 147 parts In-Stock

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147

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Overview

Upgrade your electronic designs with the MAT02-913H by Analog Devices, a high-quality Small Signal Bipolar Junction Transistor. With its innovative design and superior performance, this NPN transistor offers reliability and efficiency for a wide range of applications. Whether you're working on audio amplifiers, voltage regulators, or other electronic circuits, this product provides unmatched value and benefits for your projects. Trust Analog Devices for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of each element, offering flexibility in circuit design.

Package Shape: ROUND

Round shape is compact and space-saving, ideal for applications where size is a constraint.

Minimum DC Current Gain (hFE): 500

High gain ensures efficient amplification of small signals, making this transistor suitable for low-power applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it reliable in various operating conditions.

Maximum Collector-Emitter Voltage: 40 V

Suitable for circuits with lower voltage requirements, providing reliable performance within the specified limit.

Maximum Collector Current (IC): 0.02 A

Capable of handling small current levels, making it suitable for low-power applications.

Terminal Position: BOTTOM

Bottom terminal position enables easy mounting and soldering onto circuit boards.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT02-913H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

500

JESD-30 Code:

O-PBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

MAT02-913H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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