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MAT02AH

Analog Devices

MAT02AH by Analog Devices

MAT02AH by Analog Devices is a NPN BJT with 2 elements and built-in diode. It has a max VCEsat of 0.1V, hFE of 500, and operates up to 150°C. Ideal for amplifier applications due to its high transition frequency of 200MHz and low collector-emitter voltage of 40V.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,449 parts In-Stock

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Digiode

USA . 828 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Sunrise Surplus Inc.

USA . 3 parts In-Stock

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Electronic Expediters

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Classic Components Corporation

USA . 1 parts In-Stock

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Parana Technologies

USA . 13,212 parts In-Stock

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$1.271

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$1.182

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$1.271

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IDEA Electronic Components Group

UK . 1,580 parts In-Stock

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$1.367

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$1.299

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$1.367

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$1.299

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DigiPath Technology Company

USA . 2,266 parts In-Stock

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$2.133

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$2.047

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AZTECH Wire

Italy . 357 parts In-Stock

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$6.298

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Semicontronic

India . 1,349 parts In-Stock

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$19.050

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$18.574

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$18.478

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One Stop Electronics

USA . 1,484 parts In-Stock

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$34.050

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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Microchip USA

USA . 1,878 parts In-Stock

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Aranea Global

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Kepictronics

USA . 320 parts In-Stock

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Corphita

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Assy Fe

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Overview

Elevate your amplifier designs with the MAT02AH by Analog Devices. Crafted with precision and expertise, this small signal bipolar junction transistor offers unparalleled quality and reliability. Ideal for a range of applications, from audio amplifiers to instrumentation, this NPN transistor boasts a maximum VCEsat of just 0.1V, ensuring optimal performance. Trust in Analog Devices' legacy of excellence and innovation, and experience the exceptional value and benefits that the MAT02AH brings to your projects. Upgrade your circuits today with the MAT02AH.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity, helping to dissipate heat efficiently and improve performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having built-in diodes in the transistor can simplify circuit design by incorporating diode functionality within the transistor itself.

Maximum VCEsat: 0.1 V

Low VCEsat value indicates minimal saturation voltage, resulting in efficient switching and reduced power loss.

No. of Elements: 2

Having 2 elements allows for more complex circuit configurations and flexibility in circuit design.

Maximum Power Dissipation Ambient: 1.8 W

With a high power dissipation rating, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 500

High DC current gain ensures stable and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Ability to operate at temperatures up to 150°C expands the range of environments where this transistor can be used.

Maximum Collector-Emitter Voltage: 40 V

High collector-emitter voltage rating offers versatility in circuit design and allows for handling higher voltages.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency enables the transistor to switch at high speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT02AH attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Trade Compliance

MAT02AH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-293-7619, 5961012937619

NIIN

012937619

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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