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MAT02AH/883C

Analog Devices

MAT02AH/883C by Analog Devices

MAT02AH/883C by Analog Devices is a NPN BJT with 2 elements, built-in diode, hFE of 500. Ideal for amplifier applications with VCEsat of 0.1V, IC of 0.02A, and fT of 200MHz. Package style is cylindrical with metal body material and tin lead finish.

Median Price

$18.620

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 50 parts In-Stock

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$18.620

100+ parts

$18.250

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$17.880

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50

$18.620

$18.250

$17.880

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Digiode

USA . 701 parts In-Stock

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$17.689

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$17.689

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Vyrian

USA . 5,313 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 49 parts In-Stock

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ComSIT Distribution GmbH

Germany . 8 parts In-Stock

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ComSIT USA

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Electronic Expediters

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Distributors (Availability)

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Parana Technologies

USA . 12,515 parts In-Stock

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$1.096

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$1.019

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$1.096

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$1.019

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IDEA Electronic Components Group

UK . 1,382 parts In-Stock

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$1.178

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$1.119

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$1.178

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$1.119

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DigiPath Technology Company

USA . 2,139 parts In-Stock

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$1.838

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$1.764

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$1.838

$1.764

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Semicontronic

India . 23 parts In-Stock

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$15.830

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$15.434

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$15.355

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$15.830

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Corphita

USA . 364 parts In-Stock

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$16.758

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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Microchip USA

USA . 2,263 parts In-Stock

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Kepictronics

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Overview

Elevate your electronic designs with the MAT02AH/883C from Analog Devices, a leading manufacturer known for producing high-quality components. This Small Signal Bipolar Junction Transistor offers exceptional performance in amplifier applications, with a low VCEsat of 0.1V and a DC current gain of 500. Its durable metal package body and unique configuration with built-in diode provide added value and reliability. Trust Analog Devices to deliver innovative solutions that enhance your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good heat dissipation, making the transistor suitable for applications requiring high power dissipation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits and have high input impedance, making them ideal for small signal applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for flexibility in circuit design and the built-in diode provides protection against reverse current flow.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in signal amplification circuits.

Maximum VCEsat: 0.1 V

Low VCEsat value indicates low power loss and high efficiency in switching applications.

Package Shape: ROUND

Round package shape is compact and allows for easy mounting in tight spaces.

Terminal Form: WIRE

Wire terminals provide reliable electrical connections and are suitable for hand soldering.

No. of Elements: 2

Two elements provide dual functionality or amplification, allowing for more complex circuit designs.

No. of Terminals: 6

Six terminals offer more connection options and flexibility in circuit integration.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is durable and easily mountable, suitable for industrial applications.

Maximum Power Dissipation Ambient: 1.8 W

High power dissipation capability allows the transistor to handle higher currents and voltages without overheating.

Minimum DC Current Gain (hFE): 500

High minimum DC current gain ensures consistent amplification and signal strength in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to function reliably in elevated temperature environments.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage rating makes the transistor suitable for applications requiring higher voltage handling capability.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and high breakdown voltage, improving the reliability and performance of the transistor.

Maximum Collector Current (IC): 0.02 A

Low maximum collector current rating allows for efficient current handling and prevents overheating in the transistor.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and accessibility in circuit layouts.

Case Connection: SUBSTRATE

Substrate case connection provides good thermal conduction and electrical isolation, enhancing the transistor's performance and reliability.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency indicates fast switching speed and high-frequency operation capability, making it ideal for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT02AH/883C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Trade Compliance

MAT02AH/883C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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