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MAT01AH/883

Analog Devices

MAT01AH/883 by Analog Devices

MAT01AH/883 by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.2V, and hFE of 500. Ideal for applications requiring high DC current gain and low collector-emitter voltage. With a max operating temperature of 150°C, it offers a transition frequency of 450MHz for high-speed performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Vyrian

USA . 8,355 parts In-Stock

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LWI Electronics Inc

India . 45 parts In-Stock

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45

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Electronic Expediters

USA . 40 parts In-Stock

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40

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Digiode

USA . 22 parts In-Stock

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ComSIT Distribution GmbH

Germany . 9 parts In-Stock

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Electronics Depot

USA . 7 parts In-Stock

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Sunrise Surplus Inc.

USA . 5 parts In-Stock

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Q Components

USA . 4 parts In-Stock

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Inland Empire Components Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 25,472 parts In-Stock

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$1.036

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$0.963

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$1.036

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IDEA Electronic Components Group

UK . 47 parts In-Stock

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$1.114

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$1.058

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47

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DigiPath Technology Company

USA . 2,179 parts In-Stock

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$1.738

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$1.668

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$1.738

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Semicontronic

India . 1,156 parts In-Stock

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$10.050

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$9.799

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$9.748

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AZTECH Wire

Italy . 803 parts In-Stock

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One Stop Electronics

USA . 223 parts In-Stock

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$28.050

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

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Overview

Looking for high-quality Small Signal Bipolar Junction Transistors? Look no further than the MAT01AH/883 by Analog Devices. With a reputation for excellence, Analog Devices delivers products that meet the highest standards. Perfect for a variety of applications, this NPN transistor offers superior performance and reliability. Experience the value and benefits this product brings to your projects today!

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and heat dissipation, ensuring reliable performance in various environments.

Polarity or Channel Type: NPN

Allows for easy integration with NPN-based circuits and compatibility with a wide range of applications.

Maximum VCEsat: 0.2 V

Low VCEsat minimizes power loss and improves efficiency in circuit designs.

Package Shape: ROUND

Compact and versatile design for easy installation and placement in electronic circuits.

No. of Terminals: 6

Provides flexibility in circuit connections and configurations.

Maximum Power Dissipation Ambient: 1.8 W

High power dissipation capability allows for handling larger loads without overheating.

Minimum DC Current Gain (hFE): 500

High DC current gain ensures stable and consistent amplification of electrical signals.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications requiring higher voltage operation and protection against voltage spikes.

Nominal Transition Frequency (fT): 450 MHz

High transition frequency enables fast switching speeds and high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT01AH/883 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

MAT01AH/883 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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