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MAT-01NACG

Analog Devices

MAT-01NACG by Analog Devices

MAT-01NACG by Analog Devices is a PNP BJT with 2 separate elements for amplifier applications. It has a max VCEsat of 0.25V, hFE of 250, and operates up to 150°C. This surface-mount transistor features a max IC of 0.025A and fT of 450MHz in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,723 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,723

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-

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Digiode

USA . 782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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782

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 24,705 parts In-Stock

1+ parts

$1.350

100+ parts

-

1k+ parts

$1.256

10k+ parts

-

24,705

$1.350

-

$1.256

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IDEA Electronic Components Group

UK . 477 parts In-Stock

1+ parts

$1.452

100+ parts

-

1k+ parts

$1.379

10k+ parts

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477

$1.452

-

$1.379

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DigiPath Technology Company

USA . 2,077 parts In-Stock

1+ parts

$2.265

100+ parts

$2.175

1k+ parts

-

10k+ parts

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2,077

$2.265

$2.175

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Semicontronic

India . 278 parts In-Stock

1+ parts

$4.050

100+ parts

$3.949

1k+ parts

$3.928

10k+ parts

-

278

$4.050

$3.949

$3.928

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One Stop Electronics

USA . 1,534 parts In-Stock

1+ parts

$8.050

100+ parts

-

1k+ parts

-

10k+ parts

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1,534

$8.050

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AZTECH Wire

Italy . 477 parts In-Stock

1+ parts

$10.805

100+ parts

-

1k+ parts

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10k+ parts

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477

$10.805

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Corphita

USA . 214 parts In-Stock

1+ parts

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214

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Overview

Enhance your amplifier designs with the Analog Devices MAT-01NACG Small Signal BJT. Manufactured by industry leader Analog Devices, this PNP transistor boasts superior quality and reliability. With a maximum VCEsat of 0.25V and a minimum hFE of 250, this transistor offers high performance in a compact rectangular package. Ideal for amplifier applications, the MAT-01NACG delivers exceptional value and benefits to customers looking for a reliable and efficient solution for their electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design and can optimize performance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable and efficient performance in amplification circuits.

Surface Mount: YES

Surface mount packaging makes installation and circuit board assembly easier and more efficient.

Maximum VCEsat: 0.25 V

Low VCEsat means minimal voltage drop across the collector-emitter junction, reducing power dissipation and improving efficiency.

Package Shape: RECTANGULAR

Rectangular packaging is space-efficient and can be easily mounted on circuit boards or components.

No. of Elements: 2

Having 2 elements allows for more complex circuit configurations and better control over transistor behavior.

Package Style (Meter): UNCASED CHIP

Uncased chip packaging is compact and suitable for applications where space is limited.

Maximum Power Dissipation Ambient: 1.8 W

High power dissipation rating ensures that the transistor can handle increased power levels without overheating.

Minimum DC Current Gain (hFE): 250

High current gain ensures accurate amplification and signal control in amplifier circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

High VCEO rating ensures safe operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material provides stable and consistent performance characteristics, making it a reliable choice for electronic circuits.

Maximum Collector Current (IC): 0.025 A

Sufficient collector current rating for many amplifier applications, ensuring proper signal amplification.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity for reliable connections.

Terminal Position: UPPER

Upper terminal position facilitates easy integration into circuit designs and board layouts.

Nominal Transition Frequency (fT): 450 MHz

High transition frequency allows for fast signal switching and amplification, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT-01NACG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-XUUC-N6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

MAT-01NACG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.40

SB

8541.29.00.40

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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