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MAT02-903H

Analog Devices

MAT02-903H by Analog Devices

MAT02-903H by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.1V, and hFE of 275. Ideal for low-power applications, it has a max IC of 0.02A, VCE of 40V, and operates b/w -55 to 125 °C. Its plastic/epoxy package with wire terminals makes it suitable for various small signal circuit designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,597 parts In-Stock

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6,597

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Digiode

USA . 553 parts In-Stock

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553

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Semi Source

USA . 9 parts In-Stock

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Parana Technologies

USA . 7,698 parts In-Stock

1+ parts

$1.197

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$1.113

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7,698

$1.197

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$1.113

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IDEA Electronic Components Group

UK . 1,979 parts In-Stock

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$1.287

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$1.223

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1,979

$1.287

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DigiPath Technology Company

USA . 290 parts In-Stock

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$2.008

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$1.927

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290

$2.008

$1.927

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$2.085

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$1.897

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$1.710

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$2.085

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Semicontronic

India . 372 parts In-Stock

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$8.050

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$7.849

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$7.808

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372

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$7.808

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AZTECH Wire

Italy . 863 parts In-Stock

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$16.161

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One Stop Electronics

USA . 1,166 parts In-Stock

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$29.050

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Corphita

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Overview

Enhance your electronic designs with the MAT02-903H from Analog Devices, a leading manufacturer known for superior quality and reliability. This small signal bipolar junction transistor (BJT) offers exceptional performance in various applications, thanks to its NPN polarity, separate configuration, and two elements. With a low VCEsat of 0.1V and a minimum DC current gain of 275, this transistor provides excellent efficiency and precision. Whether you're working on amplifiers, oscillators, or other circuits, the MAT02-903H delivers the value and benefits you need for successful projects. Elevate your designs with this high-quality component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for a variety of electronic applications.

Maximum VCEsat: 0.1 V

Low VCEsat minimizes power dissipation and improves efficiency in switching applications.

Terminal Form: WIRE

Wire terminals make it easy to connect the transistor to a circuit, simplifying installation and maintenance.

Minimum DC Current Gain (hFE): 275

A high DC current gain ensures stable and consistent performance in amplification circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 40 V

This voltage rating allows the transistor to handle high voltage applications effectively.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT02-903H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

275

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-PBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Maximum VCEsat:

.1 V

Trade Compliance

MAT02-903H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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