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MAT-01GH/883

Analog Devices

MAT-01GH/883 by Analog Devices

MAT-01GH/883 by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.25V, and hFE of 250. It is used in MIL applications for its max operating temp of 125°C, max collector-emitter voltage of 45V, and low power dissipation at 1.8W.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,820 parts In-Stock

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6,820

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Digiode

USA . 111 parts In-Stock

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111

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Parana Technologies

USA . 12,683 parts In-Stock

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$1.320

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$1.227

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12,683

$1.320

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$1.227

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IDEA Electronic Components Group

UK . 1,018 parts In-Stock

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$1.419

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$1.348

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1,018

$1.419

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$1.348

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DigiPath Technology Company

USA . 601 parts In-Stock

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$2.214

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$2.125

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601

$2.214

$2.125

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One Stop Electronics

USA . 214 parts In-Stock

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$6.050

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214

$6.050

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AZTECH Wire

Italy . 694 parts In-Stock

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$17.944

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694

$17.944

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Semicontronic

India . 1,030 parts In-Stock

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$36.050

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$35.149

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$34.968

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1,030

$36.050

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$34.968

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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Corphita

USA . 115 parts In-Stock

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Overview

Elevate your electronic designs with the MAT-01GH/883 from Analog Devices, a leading manufacturer known for superior quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance and versatility in a compact package. With its NPN polarity and separate 2-element configuration, this transistor is perfect for a wide range of applications. From audio amplifiers to signal processing circuits, the MAT-01GH/883 delivers unmatched value, benefits, and advantages that will take your projects to the next level. Trust Analog Devices for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent thermal conductivity, allowing for efficient heat dissipation and ensuring the transistor operates at a stable temperature.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and versatility.

Maximum VCEsat: 0.25 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, improving efficiency and reducing power consumption.

Maximum Power Dissipation Ambient: 1.8 W

High power dissipation rating allows for reliable operation under various operating conditions without the risk of overheating.

Minimum DC Current Gain (hFE): 250

High DC current gain ensures accurate and consistent amplification of input signals, making the transistor suitable for precision applications.

Maximum Collector-Emitter Voltage: 45 V

High maximum collector-emitter voltage rating provides a wide margin of safety and ensures the transistor can handle higher voltages without breakdown.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT-01GH/883 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Case Connection:

SUBSTRATE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.8 W

Qualification:

Not Qualified

Reference Standard:

MIL

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

MAT-01GH/883 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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