Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
Add filters
All
Selected
DN0150ALP4-7B
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
HIGH RELIABILITY
COLLECTOR
.1 A
50 V
SINGLE
120
R-PBCC-N3
e4
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
CHIP CARRIER
260
NPN
.45 W
Not Qualified
Other Transistors
YES
NICKEL PALLADIUM GOLD
NO LEAD
BOTTOM
30
SILICON
60 MHz
DN0150BLP4-7B
200
DP0150ALP4-7B
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
PNP
80 MHz
DP0150BLP4-7B
MAT12AHZ
Analog Devices
MAT12AHZ by Analog Devices is a NPN BJT with 2 elements & built-in diode. It has hFE of 300, fT of 200 MHz, & IC of 0.02 A. Ideal for amplifier applications due to its high gain, low collector-emitter voltage of 40 V, & operating temperature up to 150°C.
LOW NOISE
SUBSTRATE
.02 A
40 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
300
O-MBCY-W6
2
6
METAL
ROUND
CYLINDRICAL
NOT SPECIFIED
NO
WIRE
AMPLIFIER
200 MHz
NSVB114YPDXV6T1G
Onsemi
NSVB114YPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, max VCE of 50V, and hFE of 80. This surface-mount transistor has a package style of small outline and complies with AEC-Q101 standards.
BUILT-IN BIAS RESISTOR RATIO 4.7
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
R-PDSO-F6
SMALL OUTLINE
NPN AND PNP
.5 W
AEC-Q101
BIP General Purpose Small Signal
FLAT
DUAL
SWITCHING
FMMT619-TP
Micro Commercial Components
FMMT619-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 100, VCE of 50V, and IC of 2A. Ideal for small outline applications requiring high transition frequency up to 100MHz in surface mount configurations.
2 A
100
R-PDSO-G3
e3
MATTE TIN
GULL WING
10
100 MHz
DTD143TKT146
ROHM
ROHM DTD143TKT146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.5A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 200MHz.
BUILT-IN BIAS RESISTOR
.5 A
SINGLE WITH BUILT-IN RESISTOR
e1
.2 W
TIN SILVER COPPER
.3 V
2SB1386T100R
ROHM 2SB1386T100R is a PNP BJT transistor with VCEsat of 1V, hFE of 180, and IC of 5A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 120MHz. Its small outline package makes it suitable for surface mount designs.
5 A
20 V
180
R-PSSO-F3
e2
2 W
Tin/Copper (Sn/Cu)
120 MHz
1 V
2SB1184TLQ
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
3 A
R-PSSO-G2
15 W
Tin/Copper (Sn98Cu2)
70 MHz
2SA1579T106R
ROHM's 2SA1579T106R is a PNP small signal BJT transistor with a max VCEsat of 0.5V and a min DC current gain (hFE) of 180. It is commonly used as an amplifier in various applications.
.05 A
120 V
140 MHz
.5 V
2SA1727TLQ
ROHM 2SA1727TLQ is a PNP BJT transistor with max. collector-emitter voltage of 400V and max. power dissipation of 10W. With hFE of min. 120, it's ideal for switching applications in small outline packages at up to 150°C operating temperature.
400 V
10 W
12 MHz
2SC5001TLQ
ROHM 2SC5001TLQ is a NPN BJT transistor with max. power dissipation of 10W, hFE of 120, and fT of 150MHz. Ideal for switching applications in small outline packages due to its high collector current and voltage capabilities.
10 A
TIN COPPER
150 MHz
2SC5053T100Q
ROHM 2SC5053T100Q is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 120, and IC of 1A. Suitable for surface mount designs with a max operating temperature of 150°C.
1 A
.4 V
2SD2153T100V
ROHM 2SD2153T100V is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 820, and IC of 2A. Ideal for amplifier applications due to its high transition frequency of 110MHz and low power dissipation. Features single configuration in a small outline package suitable for surface mount technology.
25 V
820
110 MHz
DTA144EUAT106
ROHM DTA144EUAT106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.
BUILT IN BIAS RESISTOR RATIO IS 1
68
250 MHz
DTC114TUAT106
ROHM DTC114TUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.
DTC124XUAT106
ROHM DTC124XUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
DTC143EUA-T106
ROHM DTC143EUA-T106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications, it has a built-in resistor in a small outline package suitable for surface mount technology. Operating up to 150°C, it offers high performance in compact designs.
BUILT-IN BIAS RESISTOR RATIO IS 1
DTC363EUT106
ROHM DTC363EUT106 is a NPN BJT with built-in resistor for switching applications. Features include 0.2W power dissipation, 20V collector-emitter voltage, and 200MHz transition frequency. Ideal for surface mount designs requiring small outline packages.
.6 A
70
DTC114ESATP
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
R-PSIP-T3
IN-LINE
.3 W
THROUGH-HOLE
DTC143TSATP
ROHM DTC143TSATP is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications with max operating temp of 150°C. Package style: IN-LINE, terminal form: THROUGH-HOLE, and terminal finish: TIN SILVER COPPER.
BC858BWT106
ROHM BC858BWT106 is a PNP BJT with 30V VCEO, 0.1A IC, and 210 hFE. Ideal for small signal applications in electronics due to its 250MHz fT, Gull Wing terminals, and compact Small Outline package. With a max operating temp of 150°C, it's suitable for various surface mount designs.
30 V
210
.35 W
DTA113ZETL
ROHM DTA113ZETL is a PNP BJT transistor with VCEsat of 0.3V, hFE of 33, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and transition frequency of 250MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 10
33
.15 W
DTA114EUA-T106
ROHM's DTA114EUA-T106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.
BIP General Purpose Small Signals
DTA123JUA-T106
ROHM's DTA123JUA-T106 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 250MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers efficient performance in compact designs.
BUILT-IN BIAS RESISTOR RATIO IS 21
DTC114GUAT106
ROHM DTC114GUAT106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.
2SD2144STPW
ROHM 2SD2144STPW is a NPN BJT transistor with max. power dissipation of 0.3W and min. DC current gain of 1200, ideal for low-power applications. With a max. collector-emitter voltage of 20V and max. collector current of 0.5A, it operates up to 150°C making it suitable for various electronic circuits requiring high frequency operation up to 350MHz in an in-line package style.
1200
350 MHz
2SD1757KT146R
ROHM 2SD1757KT146R is a NPN BJT transistor with max. collector-emitter voltage of 15V, ideal for switching applications. Features include min. DC current gain of 180 and max. operating temp of 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs in various electronic circuits.
15 V
Tin/Silver/Copper (Sn/Ag/Cu)
2SD2226KT146W
ROHM 2SD2226KT146W is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.15A. It has a min. DC current gain of 1200, suitable for small signal applications in electronics due to its high transition frequency of 250MHz. The Gull Wing terminal form and small outline package make it ideal for surface mount designs requiring compact components.
.15 A
2SD1760TLQ
ROHM 2SD1760TLQ is a NPN BJT transistor with max. power dissipation of 15W and max. collector current of 3A. Ideal for switching applications, it has a min. DC current gain of 120 (hFE) and operates up to 150°C. Its small outline package makes it suitable for surface mount designs in various electronic circuits.
90 MHz
2SD1664T100Q
ROHM 2SD1664T100Q is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max voltage of 32V.
32 V
UMC4NTR
ROHM UMC4NTR is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. Features include VCEsat of 0.3V, hFE of 68, and fT of 250MHz. With a max operating temperature of 150°C, it has a collector-emitter voltage of 50V and collector current of 0.03A.
BUILT IN BIAS RESISTOR RATIO 1
.03 A
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G5
5
MMST2222AT146
ROHM MMST2222AT146 is a NPN BJT transistor for switching applications. Features include VCEsat of 0.6V, hFE of 40, and IC of 0.6A. With a max operating temperature of 150°C, it has a transition frequency of 300MHz making it suitable for high-speed switching circuits.
7 pF
40
300 MHz
285 ns
35 ns
.6 V
MMST3904T146
ROHM MMST3904T146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.2A. Ideal for switching applications due to its fast turn on/off times (ton: 70ns, toff: 250ns) and high transition frequency (fT: 300MHz). Suitable for surface mount designs in small outline packages.
.2 A
4 pF
250 ns
70 ns
MMSTA06T146
ROHM MMSTA06T146 is a NPN BJT transistor with VCEsat of 0.25V, hFE of 100, and IC of 0.5A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. Features gull wing terminals in a plastic/epoxy body for surface mount assembly.
80 V
.25 V
NSVMMUN2113LT3G
NSVMMUN2113LT3G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications in automotive electronics due to AEC-Q101 certification and built-in resistor configuration. Operating temperature range from -55 to 150 °C ensures reliable performance in various environments.
BUILT IN BIAS RESISTANCE RATIO IS 1
TO-236AB
-55 Cel
.4 W
Matte Tin (Sn) - annealed
BCX6825H6327XTSA1
Infineon Technologies
BCX6825H6327XTSA1 by Infineon is a NPN BJT transistor with 3W power dissipation, hFE of 160, and 20V collector-emitter voltage. It's used as an amplifier in applications requiring a small outline package style for surface mount assembly.
160
3 W
Tin (Sn)
EMD9FHAT2R
ROHM EMD9FHAT2R is a Small Signal BJT with NPN and PNP types. It has 2 elements with built-in resistor for switching applications. Features include hFE of 68, VCE of 50V, IC of 0.1A, fT of 250MHz. Suitable for surface mount in automotive electronics due to AEC-Q101 compliance.
BUILT IN BIAS RESISTANCE RATIO IS 4.7
UMD22NFHATR
ROHM UMD22NFHATR is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It's ideal for switching applications, featuring 80 min hFE, 50V VCEO, and 250MHz fT. Package: SOT-363, surface mount Gull Wing terminals.
BUILT IN BIAS RESISTANCE RATIO IS 10
R-PDSO-G6
STBV42-AP
STMicroelectronics
STBV42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.
TO-92
O-PBCY-T3
1 W
STBV42G-AP
STBV42G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.
STBV42G
STBV42G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for various electronic circuits requiring reliable performance.
STX13003G
STX13003G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronics.
1.5 W
4700 ns
MMBT3904TT1
MMBT3904TT1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. With a small outline package style and Gull Wing terminal form, it operates at up to 150°C.
e0
235
Tin/Lead (Sn/Pb)
BC847BTT1
BC847BTT1 by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 200, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates at up to 150 °C, with Vce(max) of 45V.
45 V
BC847CTT1
BC847CTT1 by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and min DC current gain of 420. Ideal for amplifier applications, it operates at up to 150°C with a max collector-emitter voltage of 45V.
420
TIN LEAD
BC857BTT1
BC857BTT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and transition frequency of 100MHz. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for various electronic designs.
220
.125 W
© 2023 All rights reserved
