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DTC143EUA-T106

ROHM

DTC143EUA-T106 by ROHM

ROHM DTC143EUA-T106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications, it has a built-in resistor in a small outline package suitable for surface mount technology. Operating up to 150°C, it offers high performance in compact designs.

Median Price

$0.550

Lifecycle Status

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15

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Chip1Stop

Japan . 251 parts In-Stock

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$1.070

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Future Electronics

Canada . 3,000 parts In-Stock

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Arrow

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Nova Conductors

Japan . 1,000 parts In-Stock

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Chip Stock

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Cyclops Electronics Ltd

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ComSIT Distribution GmbH

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R&J Components

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PC Components Company LLC

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Bristol Electronics

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Vyrian

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IBS Electronics

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Semtec, LLC

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LWI Electronics Inc

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 778 parts In-Stock

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$0.008

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Bastille Electronics

Australia . 691 parts In-Stock

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$0.115

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AZTECH Wire

Italy . 985 parts In-Stock

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RC Electronics

USA . 140,157 parts In-Stock

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Perfect Parts

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Futuretech Components

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Epart123

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GreenTree Electronics

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Infinite Electronics LLP (Excess)

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Alle Elektronik GmbH

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Metaverse IC Inc.

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Overview

Enhance your electronic projects with the DTC143EUA-T106 by ROHM, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With its NPN configuration and built-in resistor, this transistor offers seamless performance and reliability. The compact rectangular package with gull wing terminals makes it easy to integrate into your designs. Trust ROHM's reputation for excellence in manufacturing to deliver a product that exceeds expectations. Experience the benefits of low VCEsat, high power dissipation, and a high DC current gain. Elevate your projects with the DTC143EUA-T106 and unlock endless possibilities in electronic innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Allows for easy integration into circuits and compatibility with NPN-based components.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design and saves space by integrating a resistor within the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering reliable and efficient performance in such scenarios.

Surface Mount: YES

Enables easy and secure installation on PCBs, suitable for automated assembly processes.

Maximum VCEsat: 0.3 V

Low VCEsat reduces power losses and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Facilitates compact placement on the PCB, optimizing use of space.

Terminal Form: GULL WING

Provides a reliable connection and easy soldering during installation.

No. of Terminals: 3

Simplifies connectivity and minimizes chances of errors during circuit fabrication.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low-power applications, ensuring safe operation within specified limits.

Package Style (Meter): SMALL OUTLINE

Compact size allows for high-density placement on PCBs, saving space.

Maximum Power Dissipation Ambient: 0.2 W

Can be operated under ambient conditions without risk of overheating.

Minimum DC Current Gain (hFE): 30

Provides sufficient current gain for reliable amplification and signal control.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltage levels, expanding application possibilities.

Transistor Element Material: SILICON

Ensures good performance and reliability due to the known characteristics of silicon in semiconductor devices.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current requirements, ensuring safe operation.

Terminal Finish: TIN SILVER COPPER

Provides a reliable and corrosion-resistant finish, enhancing the longevity of the component.

Terminal Position: DUAL

Facilitates easy and correct orientation during installation on the PCB.

Nominal Transition Frequency (fT): 250 MHz

Good frequency response for switching applications, ensuring fast and efficient operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC143EUA-T106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTC143EUA-T106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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