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DTC114YET1G

Onsemi

DTC114YET1G by Onsemi

DTC114YET1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals operates b/w -55 to 150°C, making it suitable for various electronic devices.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Arrow

USA . 25,165 parts In-Stock

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Mouser Electronics

USA . 16,729 parts In-Stock

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$0.180

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$0.067

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$0.042

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16,729

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$0.067

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Flip Electronics (Authorized)

USA . 4,189,207 parts In-Stock

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Newark

USA . 531,000 parts In-Stock

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Rochester

USA . 504,000 parts In-Stock

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$0.040

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Verical

USA . 438,000 parts In-Stock

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DigiKey

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Chip1Stop

Japan . 8,634 parts In-Stock

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Farnell

UK . 3,000 parts In-Stock

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Element14

Singapore . 3,000 parts In-Stock

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Mobius Materials

USA . 616,079 parts In-Stock

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Digiode

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Nova Conductors

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550

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Bristol Electronics

USA . 29,747 parts In-Stock

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$0.113

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29,747

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Maritex

Poland . 11,577 parts In-Stock

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$0.179

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$0.044

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11,577

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Flip Electronics

USA . 3,929,207 parts In-Stock

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Vyrian

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NAC Semi

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Dan-Mar Components

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Chip Stock

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Atlantic Semiconductor

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Corohmni

South Africa . 193 parts In-Stock

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Corphita

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Ampacity Inc.

Singapore . 476,248 parts In-Stock

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Component Stockers USA

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Argo Parts USA

USA . 2,067 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Perfect Parts

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Israel . 267,000 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

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Lixinc

USA . 16,489 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Germany . 6,002 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,272 parts In-Stock

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Overview

Enhance your electronic projects with the DTC114YET1G by Onsemi, a top-tier manufacturer known for its high-quality components. This NPN small signal bipolar junction transistor with a built-in resistor is perfect for switching applications, offering reliable performance and durability. With a compact rectangular package design and gull wing terminals, this transistor is easy to install and guarantees efficient operation. Upgrade your circuits with the DTC114YET1G and experience the superior value it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making the transistor more efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in this specific function.

Surface Mount: YES

Enables easy and efficient PCB assembly, making integration into electronic devices convenient.

Terminal Form: GULL WING

Gull wing terminals facilitate soldering during assembly, ensuring secure connections and reliable operation.

Maximum Power Dissipation (Abs): 0.3 W

With a higher power dissipation rating, the transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures sufficient amplification in the circuit, enhancing overall performance.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the transistor to function reliably in various industrial environments.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring moderate voltage levels, ensuring compatibility with a wide range of circuits.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties, ensuring stability and efficiency in transistor operation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the transistor to function in cold environments without performance degradation.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate collector currents, making it suitable for various switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish offers good solderability and corrosion resistance, ensuring long-term reliability in the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options, enhancing versatility in circuit design and assembly.

Maximum Time At Peak Reflow Temperature (s): 40

Sufficient time at peak reflow temperature ensures proper soldering and component integration during PCB assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables reliable solder joints and robust assembly in manufacturing processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC114YET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 0.21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC114YET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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