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DTC114YKAT146

ROHM

DTC114YKAT146 by ROHM

ROHM DTC114YKAT146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with peak reflow temp of 260°C, suitable for high-frequency operations up to 250MHz.

Median Price

$0.079

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Overview

Unlock the power of innovative technology with the DTC114YKAT146 by ROHM. Manufactured with precision and expertise, this Small Signal Bipolar Junction Transistor offers exceptional quality and reliability. Ideal for switching applications, this NPN transistor with a built-in resistor provides seamless performance. With a maximum VCEsat of 0.3V and a minimum DC current gain of 68, this product ensures efficient operation at a maximum collector-emitter voltage of 50V. Experience unparalleled value and benefits with ROHM's cutting-edge transistor, designed to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

Allows for effective switching and amplification of signals in electronic circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design and saves space by incorporating a resistor within the transistor package.

Transistor Application: SWITCHING

Designed for efficient switching applications, making it ideal for use in electronic devices.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, facilitating automated manufacturing processes.

Maximum VCEsat: 0.3 V

Low VCEsat value ensures minimal power loss and efficient operation in transistor switching applications.

Package Shape: RECTANGULAR

Sleek and compact design for space-saving and efficient placement on circuit boards.

Terminal Form: GULL WING

Facilitates easy soldering and connection to circuit boards, ensuring reliable electrical contact.

No. of Terminals: 3

Provides necessary connections for the transistor to function effectively within a circuit.

Maximum Power Dissipation (Abs): 0.2 W

Handles power dissipation effectively, preventing overheating and ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact package size fits well in space-constrained electronic designs.

Maximum Power Dissipation Ambient: 0.2 W

Capable of dissipating heat efficiently in ambient conditions, maintaining stable performance.

Minimum DC Current Gain (hFE): 68

Ensures consistent and reliable amplification of signals in a circuit.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures, suitable for various industrial and automotive applications.

Maximum Collector-Emitter Voltage: 50 V

Handles high voltage levels safely, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers stability and reliability in electronic circuits, ensuring long-term performance.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for various switching applications.

Terminal Finish: TIN SILVER COPPER

Provides a durable and conductive finish for reliable soldering and electrical connections.

Terminal Position: DUAL

Allows for secure and stable mounting on circuit boards, ensuring reliable electrical connections.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for a specified duration, suitable for manufacturing processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during assembly, ensuring reliability in manufacturing.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC114YKAT146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTC114YKAT146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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