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DTC123JET1G

Onsemi

DTC123JET1G by Onsemi

DTC123JET1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.3W. This surface-mount device comes in a small outline package ideal for compact electronic designs.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

1k+ parts

$0.022

10k+ parts

-

6,000

$0.026

$0.025

$0.022

-

Mouser Electronics

USA . 28,624 parts In-Stock

1+ parts

$0.170

100+ parts

$0.063

1k+ parts

$0.040

10k+ parts

$0.030

28,624

$0.170

$0.063

$0.040

$0.030

DigiKey

USA . 18,247 parts In-Stock

1+ parts

$0.170

100+ parts

$0.063

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$0.040

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18,247

$0.170

$0.063

$0.040

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Newark

USA . 153,000 parts In-Stock

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-

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$0.032

153,000

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$0.032

Arrow

USA . 6,000 parts In-Stock

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$0.028

6,000

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$0.028

Verical

USA . 6,000 parts In-Stock

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$0.028

6,000

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$0.028

Farnell

UK . 1,060 parts In-Stock

1+ parts

-

100+ parts

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$0.038

10k+ parts

$0.033

1,060

-

-

$0.038

$0.033

Element14

Singapore . 1,060 parts In-Stock

1+ parts

-

100+ parts

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$0.056

10k+ parts

$0.055

1,060

-

-

$0.056

$0.055

Chip1Stop

Japan . 475 parts In-Stock

1+ parts

-

100+ parts

$0.057

1k+ parts

$0.043

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475

-

$0.057

$0.043

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,295 parts In-Stock

1+ parts

$0.025

100+ parts

-

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2,295

$0.025

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Nova Conductors

Japan . 50 parts In-Stock

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$0.039

100+ parts

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50

$0.039

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Bristol Electronics

USA . 3,795 parts In-Stock

1+ parts

$0.098

100+ parts

$0.049

1k+ parts

$0.019

10k+ parts

$0.015

3,795

$0.098

$0.049

$0.019

$0.015

IBS Electronics

USA . 531,000 parts In-Stock

1+ parts

-

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$0.032

531,000

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$0.032

NAC Semi

USA . 375,000 parts In-Stock

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Flip Electronics

USA . 30,000 parts In-Stock

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Chip Stock

USA . 26,976 parts In-Stock

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26,976

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ComSIT Distribution GmbH

Germany . 12,218 parts In-Stock

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12,218

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ComSIT USA

USA . 12,000 parts In-Stock

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Vyrian

USA . 9,707 parts In-Stock

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9,707

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Microfarads

USA . 3,586 parts In-Stock

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3,586

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,168 parts In-Stock

1+ parts

$0.020

100+ parts

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10,168

$0.020

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Corphita

USA . 2,411 parts In-Stock

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$0.023

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2,411

$0.023

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Component Stockers USA

USA . 37,697 parts In-Stock

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$0.030

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$0.020

1k+ parts

$0.020

10k+ parts

$0.010

37,697

$0.030

$0.020

$0.020

$0.010

Semicontronic

India . 10,517 parts In-Stock

1+ parts

$0.031

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$0.030

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$0.030

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10,517

$0.031

$0.030

$0.030

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Argo Parts USA

USA . 2,393 parts In-Stock

1+ parts

$0.039

100+ parts

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10k+ parts

$0.038

2,393

$0.039

-

-

$0.038

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.039

100+ parts

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500

$0.039

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Corohmni

South Africa . 736 parts In-Stock

1+ parts

$0.042

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736

$0.042

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.145

100+ parts

$1.952

1k+ parts

$1.759

10k+ parts

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1,000

$2.145

$1.952

$1.759

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Perfect Parts

USA . 230,327 parts In-Stock

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230,327

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RC Electronics

USA . 137,193 parts In-Stock

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$0.040

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137,193

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$0.040

$0.040

$0.040

Kepictronics

USA . 30,683 parts In-Stock

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30,683

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Metaverse IC Inc.

Canada . 27,000 parts In-Stock

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Eastek

USA . 21,000 parts In-Stock

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Continental Prestige Electronics

USA . 11,485 parts In-Stock

1+ parts

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$0.043

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$0.028

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$0.018

11,485

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$0.043

$0.028

$0.018

QUARKTWIN TECHNOLOGY LTD

USA . 11,106 parts In-Stock

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11,106

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SupplyDigital Components

Austria . 7,381 parts In-Stock

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7,381

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Kulean Microsystems

USA . 5,394 parts In-Stock

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5,394

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Problanco Electronics

Mexico . 3,757 parts In-Stock

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3,757

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 3,233 parts In-Stock

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GreenTree Electronics

Israel . 1,390 parts In-Stock

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1,390

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Lixinc

USA . 653 parts In-Stock

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653

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UHIMA Technologies

Türkiye . 510 parts In-Stock

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510

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Discover the power of the DTC123JET1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that is perfect for switching applications. With its NPN configuration and built-in resistor, this transistor offers unmatched reliability and performance. Designed with precision by Onsemi, a trusted manufacturer in the industry, this product provides exceptional value and benefits to customers looking for a versatile and efficient solution. Whether you're in need of a compact, high-quality transistor for your electronic projects or professional applications, the DTC123JET1G is the perfect choice for you. Unlock new possibilities and take your projects to the next level with this innovative transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the package durable and resistant to heat and external elements, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and switching applications, making this transistor suitable for a wide range of electronic circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and efficient performance in electronic circuits.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, making this transistor ideal for mass production and automated assembly processes.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliable operation in demanding applications.

Minimum DC Current Gain (hFE): 80

The high DC current gain of 80 ensures sufficient amplification of input signals, making this transistor suitable for a wide range of electronic circuits that require signal amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate reliably in elevated temperature environments, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels in electronic circuits, providing greater flexibility in circuit design.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current of 0.1 A allows this transistor to handle higher current levels, making it suitable for applications that require high current switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC123JET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 0.047

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC123JET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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